Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy

Autoria(s): Yang Guowen; Xu Junying; Xiao Jianwei; Xu Zuntu
Data(s)

1994
Identificador

http://ir.semi.ac.cn/handle/172111/19965

http://www.irgrid.ac.cn/handle/1471x/104620
Idioma(s)

英语
Fonte

Yang Guowen;Xu Junying;Xiao Jianwei;Xu Zuntu.Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy,半导体学报,1994,15(8):565
Palavras-Chave #光电子学
Tipo

期刊论文
Acesso ao item digital