Calidad de ensilaje en bolsa elaborado con silo prensa de palanca manual vs ensilaje elaborado artesanalmente

Se realizó un estudio de la calidad de los ensilajes elaborados con ayuda de un silo barril tradicional y un silo prensa de palanca manual. Para lo cual se evaluaron las características organolépticas de los ensilajes (color, olor y textura), se cuantificaron las pérdidas que se produjeron en ambas formas de ensilaje, se midió el grado de compactación de los ensilajes, así mismo las características físicas (Temperatura y pH) y químicas: Materia Seca (MS %), Proteína Cruda (PC%), Fibra Detergente Neutro (FDN%), mediante análisis bromatológico a los 45 y 60 d. Los resultados mostraron que organolépticamente los ensilajes con silo prensa fueron considerados entre excelente a bueno y los elaborados con el silo barril tradicional entre buenos a regulares. Tanto la temperatura y el pH se mantuvieron en rangos normales para los ensilajes. Se obtuvieron mayores pérdidas de material en los ensilajes elaborados con el silo barril tradicional respecto a los ensilajes elaborados con el silo prensa siendo más evidente a los 60 d de apertura de los silos. La mejor compactación se obtuvo en los ensilajes elaborados con el si lo de prensa de (288.09 kg MS m - 3 ), superando en 49.98 kg MS al ensilaje elaborados con silo barril tradicional. Las características químicas (MS %, PC %, FDN %) fueron similares en ambos tipos de ensilajes.

Caracterización nutricional de la fermentación en estado sólido de caña de azúcar (Saccharum officinarum) con diferentes niveles de inclusión de harina de granos de Canavalia (Canavalia ensiformis), 2015

Se estudió el efecto de adicionar harina de grano de Canavalia sobre la fermentación en estado sólido (FES) de la caña de azúcar (Sacchacanavalia) como forma de mejorar su valor nutricional, Se utilizó un diseño completamente al azar (DCA) con cuatro tratamientos y tres repeticiones. Caña de azúcar (T1). Los niveles de inclusión de harina de grano de Canavalia (Canavalia ensiformis) fueron 5% (T2), 7% (T3) y 10% (T4). Las variables estudiadas fueron Temperatura ambiental (TA), Temperatura de fermentación (TF), y pH, análisis bromatológicos: materia seca (MS), proteína bruta (PB), fibra detergente neutro (FDN) y digestibilidad In vitro de la materia seca (DIVMS). Los resultados obtenidos mostraron que la TA presentó variación a lo largo del día, afectando más la fermentación de saccharina rústica en comparación a sacchacanavalia. La TF fue más estable en los tratamientos de Sacchacanavalia (<32°C) respecto a saccharina rústica (>32°C). El pH que presentó sacchacanavalia se mantuvo en rangos entre los 9.23 a 9.80 en cambio la saccharina rústica fue inferior a 7. Se encontró diferencias (p<0.01) para MS inicial, no así para MS final (p>0.05). Se encontraron diferencias para PB (p<0.01) siendo mayor para el T4 (12.6%) e inferior para el T1 (2.2%). La FDN mostró una p<0.05, siendo mayor para T4 (42.5%) e inferior para T2 (36.2%), sin embargo T1 (39.2%) no difiere de ningún tratamiento. La DIVMS no mostró diferencias entre los tratamientos (p>0.05). La adición de harina de grano de Canavalia mejora la FES de la caña de azúcar y a su vez mejora el valor nutricional de la misma, lo que lo hace un alimento de mejor valor al compararlo con caña de azúcar.

Performing Fast Addition and Multiplication by Transferring Single Electrons

This paper proposes novel fast addition and multiplication circuits that are based on non-binary redundant number systems and single electron (SE) devices. The circuits consist of MOSFET-based single-electron (SE) turnstiles. We use the number of electrons to represent discrete multiple-valued logic states and we finish arithmetic operations by controlling the number of electrons transferred. We construct a compact PD2,3 adder and a 12x12bit multiplier using the PD2,3 adder. The speed of the adder can be as high as 600MHz with 400nW power dissipation. The speed of the adder is regardless of its operand length. The proposed circuits have much smaller transistors than conventional circuits.

Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G

The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/AlxGa1-xN superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/AlxGa1-xN superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/AlxGa1-xN SL can be proposed to engineer the nonlinear responses.

Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P

We introduce a double source electron beam evaporation (DSEBET) technique in this paper. The refractive index coatings were fabricated on K9 glass substrate by adjusting the evaporation rates of two independent sources. The coatings, which were described by atomic force microscopy (AFM), show good compactness and homogeneity. The antireflective (AR) coatings were fabricated on Superluminescent Diodes (SLD) by DSEBET. The hybrid AR coatings on the facets of SLD were prepared in evaporation rates of 0.22nm/s and 0.75nm/s for silicon and silicon dioxide, respectively. The results of AFM and spectral performance of coated SLD show that DSEBET has a promising future in preparing the coatings on optoelectronic devices.

Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab - art. no. 698436

Single point defect microcavity possesses only the degenerate dipole modes under certain photonic crystal structure parameters. By deforming lattice structure, the degeneracy of the dipole modes has been broken. Theoretical simulation shows the large splitting of 65nm between the splitted x-mode and y-mode, approximate to the luminescent gain spectrum, which benefits for the single mode lasing. Experimentally the single dipole mode lasing, y-mode, is achieved in the deformed microcavity.

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437

In this work, the guided modes of a photonic crystal polarization beam splitter (PC-PBS) are studied. We demonstrate that the transmission of a low-loss photonic crystal 120 degrees waveguide bend integrated with the PBS will be influenced if the PBS is multi-moded. We propose a single-moded PC-PBS structure by introducing deformed structures, and it shows twice the enhancement of the transmission. This device with remarkable improvement of performance is promising in the use of photonic crystal integrated circuits design.

The whispering gallery mode in photonic crystal ring cavity - art. no. 698438

Whispering gallery modes (WGMs) in microcavities possess ultra-high cavity Q factor. Such microcavity are easy to be fabricated, so WGMs have attracted much attention in the area of photonics and integrated photonic circuits. It is well known that the effect of total internal reflection restricts the size of this mirocavity. Such drawback goes against the integration of photon. However, the photonic crystal microcavities (PCMC) make a breakthrough recently. The WGMs in the PCMC are possible to gain both ultra-high Q and ultra-small mode volume. In this paper, the property of the mode in photonic crystal ring cavity is analyzed by FDTD and PWE. By modifying the airholes in the corners of the ring cavity, we can obtain the WGM. Also the Q factor of WGM in photonic crystal ring cavity is calculated. This favors the design of the photonic crystal microcavity components.

Wavelet denoising and feature extraction of seismic signal for footstep detection

Seismic sensors are widely used to detect moving target in ground sensor networks. Footstep detection is very important for security surveillance and other applications. Because of non-stationary characteristic of seismic signal and complex environment conditions, footstep detection is a very challenging problem. A novel wavelet denoising method based on singular value decomposition is used to solve these problems. The signal-to-noise ratio (SNR) of raw footstep signal is greatly improved using this strategy. The feature extraction method is also discussed after denosing procedure. Comparing, with kurtosis statistic feature, the wavelet energy feature is more promising for seismic footstep detection, especially in a long distance surveillance.

Growth behavior of AlInGaN films

The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved.

Desorption and Ripening of Low Density InAs Quantum Dots

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.

Design and Fabrication of a Photonic Crystal Channel Drop Filter Based on an Asymmetric Silicon-on-Insulator Slab

We report on the design and fabrication of a photonic crystal (PC) channel drop filter based on an asymmetric silicon-on-insulator (SOI) slab. The filter is composed of two symmetric stick-shape micro-cavities between two single-line-defect (W1) waveguides in a triangular lattice, and the phase matching condition for the filter to improve the drop efficiency is satisfied by modifying the positions and radii of the air holes around the micro-cavities. A sample is then fabricated by using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching processes. The measured 0 factor of the filter is about 1140, and the drop efficiency is estimated to be 73% +/- 5% by fitting the transmission spectrum.

Experimental Demonstration on Structure-Parameter Dependence of Photonic Crystal Optical Spectrum

We present fabrication and experimental measurement of a series of photonic crystal waveguides and coupled structure of PC waveguide and PC micro-cavity. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-holes single-line-defect waveguide. We fabricated these devices on a silicon-on-insulator substrate and characterized them using tunable laser source. We've obtained high-efficiency light propagation and broad flat spectrum response of photonic-crystal waveguides. A sharp attenuation at photonic crystal waveguide mode edge was observed for most structures. The edge of guided band is shifted about 31 nm with the 10 nm increase of lattice constant. Mode resonance was observed in coupled structure. Our experimental results indicate that the optical spectra of photonic crystal are very sensitive to structure parameters.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Highly efficient and tunable microlasers on photonic crystal slab

zhangdi于2010-03-09批量导入