Performing Fast Addition and Multiplication by Transferring Single Electrons

This paper proposes novel fast addition and multiplication circuits that are based on non-binary redundant number systems and single electron (SE) devices. The circuits consist of MOSFET-based single-electron (SE) turnstiles. We use the number of electrons to represent discrete multiple-valued logic states and we finish arithmetic operations by controlling the number of electrons transferred. We construct a compact PD2,3 adder and a 12x12bit multiplier using the PD2,3 adder. The speed of the adder can be as high as 600MHz with 400nW power dissipation. The speed of the adder is regardless of its operand length. The proposed circuits have much smaller transistors than conventional circuits.

This paper proposes novel fast addition and multiplication circuits that are based on non-binary redundant number systems and single electron (SE) devices. The circuits consist of MOSFET-based single-electron (SE) turnstiles. We use the number of electrons to represent discrete multiple-valued logic states and we finish arithmetic operations by controlling the number of electrons transferred. We construct a compact PD2,3 adder and a 12x12bit multiplier using the PD2,3 adder. The speed of the adder can be as high as 600MHz with 400nW power dissipation. The speed of the adder is regardless of its operand length. The proposed circuits have much smaller transistors than conventional circuits.

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IEEE.; IEEE Nanotechnol Council.; IEEE Electron Devices Soc.; Chinese Univ Hong Kong, Ctr Micro & Nano Syst.; ETH, Inst Robot & Intelligent Syst.; GETI.; KC Wong Educ Fdn.; US Army Int Technol Ctr.; ACS NANO.; CRC Press, Taylor & Francis Grp.; intel.

[Zhang, Wan-Cheng; Wu, Nan-Jian] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

IEEE.; IEEE Nanotechnol Council.; IEEE Electron Devices Soc.; Chinese Univ Hong Kong, Ctr Micro & Nano Syst.; ETH, Inst Robot & Intelligent Syst.; GETI.; KC Wong Educ Fdn.; US Army Int Technol Ctr.; ACS NANO.; CRC Press, Taylor & Francis Grp.; intel.