Growth behavior of AlInGaN films
| Data(s) |
2009
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| Resumo |
The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved. The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved. zhangdi于2010-03-09批量导入 zhangdi于2010-03-09批量导入 Intelligent Cosmos Acad Fdn.; Murata Sci Fdn.; SendaiTourism & Convent Bureau. [Shang, J. Z.; Zhang, B. P.; Mao, M. H.; Cai, L. E.; Zhang, J. Y.; Fang, Z. L.; Liu, B. L.; Yu, J. Z.; Wang, Q. M.] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China; [Shang, J. Z.; Zhang, B. P.; Mao, M. H.; Cai, L. E.; Zhang, J. Y.; Fang, Z. L.; Liu, B. L.; Yu, J. Z.; Wang, Q. M.] Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China; [Zhang, J. Y.; Yu, J. Z.; Wang, Q. M.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China; [Kusakabe, K.; Ohkawa, K.] Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan Intelligent Cosmos Acad Fdn.; Murata Sci Fdn.; SendaiTourism & Convent Bureau. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Fonte |
Shang, JZ;Zhang, BP;Mao, MH;Cai, LE;Zhang, JY;Fang, ZL;Liu, BL;Yu, JZ;Wang, QM;Kusakabe, K;Ohkawa, K.Growth behavior of AlInGaN films .见：ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,JAN 15 2009 ,311 (3): 474-477 JAN 15 |
| Palavras-Chave | #光电子学 #Scanning electron microscope |
| Tipo |
会议论文 |
