光学薄膜中界面层和表面吸附层对相位延迟的影响

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移．根据空气与膜层、膜层之间的实际情况，建立了界面层和表面吸附层模型，并运用它分析相位延迟产生误差的原因．通过优化设计，入射角为54°，在1285～1345nm之间p，s波获得了270±1°的相移，同时也使反射率在99．5％以上．用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4±1．8°的相移，同时也使反射率在99．6％以上．误差的主要来源是离子源工作特性会产生不均匀的过渡层和最

氧碘激光器相位延迟片的制备与性能研究

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移。利用矩阵法，根据菲涅耳公式和电磁场边界条件，推导出p，s波的相移。通过优化设计．入射角为54°，在1285～1345nm之间p，s波获得了270°±1°的相移，同时也使反射率在99．5％以上。用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4°±1．8°的相移，同时也使反射率在99．6％以上。误差的主要来源是离子源工作特性会产生不均匀的过渡层和最外层会吸收一些水气、灰尘等也产生

反射式相位延迟器的性能研究

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移。通过优化设计，入射角为45°，在1285～1345nm之间p，s波获得了270°±0．15°的相移和99．5％以上的反射率。对使用的膜系进行了每层光学厚度的误差分析。用离子柬溅射技术制备相位延迟膜，在大气中对样品进行不同温度的退火，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性。结果表明，未退火的样品在相应波段获得了267．5°±0．5°的相移和99．6％以上的反射率；根据拟合分析，最外层的误差和折射率与设计值的偏差是发生相移偏小的

SiO_2薄膜折射率的准确拟合分析

精确的光学常数对于设计和制备高品质的光学薄膜非常重要,尤其是那些光学性能对折射率变化敏感的薄膜。SiO_2是一种常用的低折射率材料,因与常用基底折射率相近使其准确拟合有一定难度。实验通过离子束溅射制备了SiO_2单层膜。考虑测量时的误差和基底折射率的影响,采用透射率包络和反射率包络得到了SiO_2的折射率,并用所得折射率进行反演来对这两种途径在实际测量拟合过程中的准确性进行比对。分析表明,剩余反射率在实际的测量过程中误差更小,直接用测量镀膜前后基片的剩余反射率值可以更简便更准确地得到SiO_2的折射率,能达到10~(-2)的精度。

Formação de nanopadrões em superfícies por sputtering iônico: Estudo numérico da equação anisotrópica amortecida de Kuramoto-Sivashinsky.

Apresenta-se uma abordagemnumérica para ummodelo que descreve a formação de padrões por sputtering iônico na superfície de ummaterial. Esse processo é responsável pela formação de padrões inesperadamente organizados, como ondulações, nanopontos e filas hexagonais de nanoburacos. Uma análise numérica de padrões preexistentes é proposta para investigar a dinâmica na superfície, baseada em ummodelo resumido em uma equação anisotrópica amortecida de Kuramoto-Sivashinsky, em uma superfície bidimensional com condições de contorno periódicas. Apesar de determinística, seu caráter altamente não-linear fornece uma rica gama de resultados, sendo possível descrever acuradamente diferentes padrões. Umesquema semi implícito de diferenças finitas com fatoração no tempo é aplicado na discretização da equação governante. Simulações foram realizadas com coeficientes realísticos relacionados aos parâmetros físicos (anisotropias, orientação do feixe, difusão). A estabilidade do esquema numérico foi analisada por testes de passo de tempo e espaçamento de malha, enquanto a verificação do mesmo foi realizada pelo Método das Soluções Manufaturadas. Ondulações e padrões hexagonais foram obtidos a partir de condições iniciais monomodais para determinados valores do coeficiente de amortecimento, enquanto caos espaço-temporal apareceu para valores inferiores. Os efeitos anisotrópicos na formação de padrões foramestudados, variando o ângulo de incidência.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

The dominant role of the solvent-water interface in water droplet templating of polymers

We investigate the formation of microstructured polymer networks known as Breath Figure templated structures created by the presence of water vapour over evaporating polymer solutions. We use a highly controlled experimental approach to examine this dynamic and non-equilibrium process to uniquely compare pure solvent systems with polymer solutions and demonstrate using a combination of optical microscopy, focused ion-beam milling and SEM analysis that the porous polymer microstructure is completely controlled by the interfacial forces that exist between the water droplet and the solvent until a final drying dilation of the imprints. Water droplet contact angles are the same in the presence or absence of polymer and are independent of size for droplets above 5 μm. The polymer acts a spectator that serves to trap water droplets present at the air interface, and to transfer their shape into the polymer film. For the smallest pores, however, there are unexpected variations in the contact angle with pore size that are consistent with a possible contribution from line tension at these smaller dimensions. © The Royal Society of Chemistry.

Nucleation of diamond by pure carbon ion bombardment - a transmission electron microscopy study

A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 degrees C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model. (c) 2005 American Institute of Physics.

Violet/blue photoluminescence from CeO2 thin film

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thin film. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to the electrons transition from Ce4f band to O2p band and the defect level to O2p band. And these defects levels were located in the range of 1 eV around Ce4f band.

The PL "violet shift" of cerium dioxide on silicon

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied front tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of "violet shift" was observed.

Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams

Carbon films were deposited by mass-selected ion beam technique with ion energies 50-200eV at a substrate temperature from room temperature to 80 degreesC,. For the energies used, smooth diamond-like carbon films were deposited at room temperature. When the substrate temperature was 600 degreesC,rough graphitic films were produced. But highly oriented carbon tubes were observed when the energies were larger than 140eV at 800 degreesC. They were perpendicular to the surface and parallel to each other. preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. Shallow ion implantation and stress are responsible for this orientation.

Ion bombardment as the initial stage of diamond film growth

It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.

Diamond growth by carbon ion implantation of diamond

Medium energy (5-25 keV) C-13(+) ion implantation into diamond (100) to a fluence ranging from 10(16) cm(-2) to 10(18) cm(-2) was performed for the study of diamond growth via the approach of ion beam implantation. The samples were characterized with Rutherford backscattering/channelling spectroscopy, Raman spectroscopy, X-ray photoemission spectroscopy and Auger electron spectroscopy. Extended defects are formed in the cascade collision volume during bombardment at high temperatures. Carbon incorporation indeed induces a volume growth but the diamond (100) samples receiving a fluence of 4 x 10(17) to 2 x 10(18) at. cm(-2) (with a dose rate of 5 x 10(15) at. cm(-2) s(-1) at 5 to 25 keV and 800 degrees C) showed no He-ion channelling. Common to these samples is that the top surface layer of a few nanometers has a substantial amount of graphite which can be removed by chemical etching. The rest of the grown layer is polycrystalline diamond with a very high density of extended defects.