Violet/blue photoluminescence from CeO2 thin film


Autoria(s): Chai CL; Yang SY; Liu ZK; Liao MY; Chen NF
Data(s)

2003

Resumo

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thin film. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to the electrons transition from Ce4f band to O2p band and the defect level to O2p band. And these defects levels were located in the range of 1 eV around Ce4f band.

Identificador

http://ir.semi.ac.cn/handle/172111/11508

http://www.irgrid.ac.cn/handle/1471x/64724

Idioma(s)

英语

Fonte

Chai CL; Yang SY; Liu ZK; Liao MY; Chen NF .Violet/blue photoluminescence from CeO2 thin film ,CHINESE SCIENCE BULLETIN,2003,48 (12):1198-1200

Palavras-Chave #半导体材料 #cerium dioxide thin film #PL #violet/blue #CERIUM OXIDE #DEPOSITION #INTERFACE #EMISSION #SILICON #GROWTH
Tipo

期刊论文