室温下InP（100）表面K诱发催化氮化反应的同步辐射光电子能谱研究

于2010-11-23批量导入

K对InP（100）表面催化氧化反应的同步辐射光电子能谱研究

国家自然科学基金

碱金属Rb在InP（100）表面的催化氧化作用

用XPS和UPS研究了氧在Rb复盖的和清洁的InP(100)表面的吸附行为。实验结果表明,碱金属可以使衬底的氧化能力大大增加。在氧的暴露量低于1L时,氧主要吸附在碱金属原子之间的InP衬底上,且位于Rb原子层之下。当氧暴露量增加时,氧主要还是吸附在Rb覆盖层下面,这时衬底开始氧化。在清洁表面,氧主要吸附在In原子上,样品退火后,Rb部分脱附,同时,衬底的氧化物相(InPO_4)含量增加。

水分子在Si（100）面上吸附位的确定

于2010-11-23批量导入

同步辐射光电子能谱研究室温下Na对InP（100）表面氮化反应的影响

利用同步辐射光电子能谱研究了室温下Na吸附下于P型InP(100)表面对其氮化反应的影响,通过P2p、In 4d芯能级谱的变化,对Na/InP(100)表面的氮化反应的研究表明,碱金属Na的吸附对InP(100)无明显的催化氮化作用,即使采用N_2/Na/N_2/Na/N_2/Na/InP(100)的类多层结构,在室温下也只有极少量的氮化物形成,而无明显的催化氮化反应发生.碱金属吸附层对III-V族半导体氮化反应的催化机制不同于碱金属对于元素半导体的催化反应机制,碱金属对元素半导体的催化氮化反应,吸附的碱金属与元素半导体衬底之间无需界面反应发生,而碱金属吸附层和III-V族半导体衬底之间发生界面反应而形成的表面缺陷在III-V族半导体的催化氮化反应过程中具有重要的作用.

铯对GaAs（100）表面氧化的催化作用

于2010-11-23批量导入

Cs/InP（100）界面相互作用性质的研究

于2010-11-23批量导入

O2在FeSi（100）表面的初始吸附研究

于2010-11-23批量导入

GexSi（1-x）/Si（100）应变超晶格高分辨电镜研究

国家教委基金

Low power design in 100 MHz embedded SRAM

Low power design method is used in a 100MHz embedded SRAM. The embedded SRAM used in a FFT chip is divided into 16 blocks. Two-level decoders are used and only one block can be selected at one time by tristate control circuits, while other blocks are set stand-by. The SRAM cell has been optimized and the cell area has been minimized at the same time.

Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy

The effect of thermal annealing on the Raman spectrum of Si0.33Ge0.67 alloy grown on Si (100) by molecular beam epitaxy is investigated in the temperature range of 550-800 degrees C. For annealing below 700 degrees C, interdiffusion at the interface is negligible and the residual strain plays the dominant role in the Raman shift. The strain-shift coefficients for Si-Ge and Ge-Ge phonon modes are determined to be 915 +/- 215 cm(-1) and 732 +/- 117 cm(-1), respectively. For higher temperature annealing, interdiffusion is significant and strongly affects the Raman shift and the spectral shape.

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD

The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).