Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
Data(s) |
2002
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Resumo |
The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM). The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM). 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:11导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:11Z (GMT). No. of bitstreams: 1 2870.pdf: 1680298 bytes, checksum: 5fc9e63da7813cbf8925f3386f78c97d (MD5) Previous issue date: 2002 Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China; Shandong Univ, Dept Environm Engn, Jinan 250100, Peoples R China; Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
TAYLOR & FRANCIS LTD 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND |
Fonte |
Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ .Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD .见:TAYLOR & FRANCIS LTD .FERROELECTRICS, 271,4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND ,2002,1707-1713 |
Palavras-Chave | #光电子学 #Bi2Ti2O7 #thin film #MOCVD #(111) orientation #CHEMICAL-VAPOR-DEPOSITION #CRYSTAL THIN-FILMS |
Tipo |
会议论文 |