The Quality of Democracy in Belarus and Ukraine

Korosteleva-Polglase, Elena, 'The Quality of Democracy in Belarus and Ukraine', The Journal of Communist Studies and Transition Politics, (2004) 20 (1), pp. 122-142(21) Special Issue: The Quality of Democracy in Post-Communist Europe RAE2008

Addresses of Rev. Drs. Park, Post, & Bacon : at the anniversary of the American Congregational Union, May, 1854.

http://www.archive.org/details/addressesofrevdr00parkuoft

History of the Catholic missions among the Indian tribes of the United States, 1529-1854 / by John Gilmary Shea.

http://www.archive.org/details/historyofcatholi00sheaiala

A pll based frequency synthesizer in 0.13 um sige bicmos for mb-ofdm uwb systems

With the growing demand for high-speed and high-quality short-range communication, multi-band orthogonal frequency division multiplexing ultra-wide band (MB-OFDM UWB) systems have recently garnered considerable interest in industry and in academia. To achieve a low-cost solution, highly integrated transceivers with small die area and minimum power consumption are required. The key building block of the transceiver is the frequency synthesizer. A frequency synthesizer comprised of two PLLs and one multiplexer is presented in this thesis. Ring oscillators are adopted for PLL implementation in order to drastically reduce the die area of the frequency synthesizer. The poor spectral purity appearing in the frequency synthesizers involving mixers is greatly improved in this design. Based on the specifications derived from application standards, a design methodology is presented to obtain the parameters of building blocks. As well, the simulation results are provided to verify the performance of proposed design.

SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

The performance of silicon bipolar transistors has been significantly improved by the use of ultra narrow base layers of SiGe. To further improve device performance by minimising parasitic resistance and capacitance the authors produced an unique silicon-on-insulator (SOI) substrate incorporating a buried tungsten disilicide layer. This structure forms the basis of a recent submission by Zarlink Semiconductors ( Silvaco, DeMontfort & Queen�s) to DTI for high voltage devices for automotive applications. The Queen�s part of the original EPSRC project was rated as tending to outstanding.

A 60 GHz wide tuning range SiGe bipolar VCO for HDMI and wireless docking applications

A wide tuning range voltage controlled oscillator (VCO) with novel architecture is proposed in this work. The entire circuit consists of a VCO core, a summing circuit, a single-ended to differential (STD) converter and a buffer amplifier. The VCO core oscillates at half the desired frequency and the second harmonic of the VCO core is extracted by the summing circuit, which is then converted to a differential pair by the STD. The entire VCO circuit operates from 58.85 to 70.85 GHz with 20% frequency tuning range. The measured VCO gain is less than 1.6 GHz/V. The measured phase noise at 3 MHz offset is less than -78 dBc/Hz across the entire tuning range. The differential phase error of the output signals is measured by down converting the VCO output signals to low gigahertz frequency using an on-chip mixer. The measured differential phase error is less than 8°. The VCO circuit, which is constructed using 0.35 µm SiGe technology, occupies 770 × 550 µm2 die area and consumes 62 mA under 3.5 V supply.