Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector

A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.

Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

Twin and grain boundary in InP: A synchrotron radiation study

Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

Surface plasmon resonance and electrochemistry for detection of small molecules using catalyzed deposition of metal ions on gold substrate

Small molecules are difficult to detect by conventional surface plasmon resonance (SPR) spectroscopy due to the fact that the changes in the refractive index resulted from the binding process of small biomolecules are quite small. Here, we report a simple and effective method to detect small biomolecule using SPR spectroscopy and electrochemistry by catalyzed deposition of metal ions on SPR gold film. As an example, the ascorbic acid-mediated deposition of Ag on gold film was monitored by in situ SPR spectrum. The deposition of Ag atom on gold film resulted in an obvious decrease of depth in SPR angular scan curves of reflectance intensity and minimum reflectivity angle. The depth change of the SPR reflectance intensity and minimum reflectivity angle curves mainly relied on the amount of Ag atom deposited on gold film that can be controlled by the concentration of ascorbic acid. By monitoring the deposition of Ag atom on gold film, ascorbic acid was detected in the concentration range of 2 x 10(-5) M to 1 x 10(-3) M. After each of detections, the SPR sensor surface was completely regenerated by a potential step that stripped off the Ag atom. Furthermore, the regeneration process of the sensor surface provides the feasibility for detecting the concentration of ascorbic acid by electrochemical method.

Surface plasmon resonance and electrochemistry characterization of layer-by-layer self-assembled DNA and Zr4+ thin films, and their interaction with cytochrome c

Through electrostatic layer-by-layer (LbL) assembly, negatively charged calf thymus double stranded DNA (CTds-DNA), and positively charged Zr4+ ions were alternately deposited on gold substrate modified with chemisorbed cysteamine. Thus-prepared three-dimensional DNA networks were characterized by surface plasmon resonance (SPR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and infrared reflection-absorption spectroscopy (IR-RAS). SPR spectroscopy indicates that the effective thickness of DNA monolayer in the (DNA/Zr4+), bilayer was 1.5 +/- 0.1 nm, which corresponds to the surface coverage of 79% of its full packed monolayer. At the same time, a linear increase of film thickness with increasing number of layers was also confirmed by SPR characterizations. The data of XPS and IR-RAS show that Zr4+ ions interact with both the phosphate groups and nitrogenous bases of DNA and load into the framework of DNA. Furthermore, the interactions between this composite film and heme protein cytochrome c (Cyt c) were investigated by SPR spectroscopy and electrochemistry. Compared with the adsorption of Cyt c on DNA monolayer, this composite multilayer film can obviously enhance the amount of immobilized Cyt c confirmed by SPR reflectivity-incident angle (R-theta) curves.

Solvent-induced novel morphologies in diblock copolymer blend thin films

We report the morphology and phase behaviors of blend thin films containing two poly styrene-b-poly (methyl methacrylate) (PS-b-PMMA) diblock copolymers with different blending compositions induced by a selective solvent for the PMMA block, which were studied by transmission electron microscopy (TEM). The neat asymmetric PS-b-PMMA diblock copolymers employed in this study, respectively coded as a(1) and a(2), have similar molecular weights but different volume fractions of PS block (f(PS) = 0.273 and 0.722). Another symmetric PS-b-PMMA diblock copolymer, coded as s, which has a PS block length similar to that of a(1), was also used. For the asymmetric a(1)/a(2) blend thin films, circular multilayered structures were formed. For the asymmetric a(1)/symmetric s blend thin films, inverted phases with PMMA as the dispersed domains were observed, when the weight fraction of s was less than 50%. The origins of the morphology formation in the blend thin films via solvent treatment are discussed. Combined with the theoretical prediction by Birshtein et al. (Polymer 1992, 33, 2750), we interpret the formation of these special microstructures as due to the packing frustration induced by the difference in block lengths and the preferential interactions between the solvent and PMMA block.

Morphologies in solvent-annealed thin films of symmetric diblock copolymer

We have systematically studied the thin film morphologies of symmetric poly(styrene)-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer after annealing to solvents with varying selectivity. Upon neutral solvent vapor annealing, terraced morphology is observed without any lateral structures on the surfaces. When using PS-selective solvent annealing, the film exhibits macroscopically flat with a disordered micellar structure. While PMMA-selective solvent annealing leads to the dewetting of the film with fractal-like holes, with highly ordered nanoscale depressions in the region of undewetted films. In addition, when decreasing the swelling degree of the film in the case of PMMA-selective solvent annealing, hills and valleys are observed with the coexistence of highly ordered nanoscale spheres and stripes on the surface, in contrast to the case of higher swelling degree. The differences are explained qualitatively on the basis of polymer-solvent interaction parameters of the different components.

Preparation and nonlinear optical properties of ultrathin composite films containing both a polyoxometalate anion and a binuclear phthalocyanine

An ultrathin composite film containing both polyoxometalate anion [PMo12O40](3-) ( PMo12) and a planar binuclear phthalocyanine, bi-CoPc, has been prepared by the electrostatic layer-by-layer self-assembly method. UV-vis measurements revealed regular film growth with each four-layer {PMo12/bi-CoPc/PSS/PAH} adsorption. The lm structure was characterized by small-angle X-ray reflectivity measurements, X-ray photoelectron spectra, and AFM images. The nanothick film shows a third-order nonlinear optical response of chi((3)) = 4.21 x 10(-12) esu. Experimental investigations also indicate that the combination of polyoxometalate anions [PMo12O40](3-) with the phthalocyanine bi-CoPc in multilayer films can enhance the third-order NLO susceptibility and modify the third-order NLO absorption of bi-CoPc.

In situ analysis of electropolymerization of aniline by combined electrochemistry and surface plasmon resonance

The combination of electrochemistry with surface plasmon resonance (SPR) has been used to characterize the growth of polyaniline (PAn) on a gold electrode surface during potential cycling. Potential-modulated SPR characteristics of the PAn film were also revealed. The potential switch between the oxidized and reduced states of PAn can lead to a large change of SPR response due to the variation in the imaginary part of the dielectric constant of PAn film resulting from the transition of the film in conductivity. The redox transition of the PAn film during potential cycling is very profitable to the SPR measurements. Two modes of SPR measurement, SPR angular scan (R-theta) and the time evolution of the reflectivity change at a fixed angle (R-t), were displayed to study the growth process of the PAn film. The angle shift of the resonance minimum recorded at each cathodic limit of cyclic potential scanning allows for the unambiguous measurement of the film growth. During cyclic potential scanning, the R-t curve was repeatedly modulated with the direction of the potential ramp as a result of the redox switch of the PAn film, and the amplitude of potential-modulated reflectivity change was well correlated with the cyclic number. The time differential of the R-t curve permits continuous monitoring of the film growth process. These results illustrate that the combined technique is suitable for studying the electropolymerization process of a conducting polymer.

Photoluminescent multilayer films based on polyoxometalates

Ultrathin multilayer films consisting of the polyoxotungstoeuropate cluster K-12[EuP5W30O110] (EuP5W30) and poly( allylamine hydrochloride) (PAH) have been prepared by the layer-by-layer self-assembly method. The (EuP5W30 /PAH) multilayer films have been characterized by small-angle X-ray reflectivity measurements, X-ray photoelectron spectra, and atomic force microscopy (AFM). From the AFM images, the thickness of the {PEI/PSS/PAH(EuW30/PAH)} multilayer film was estimated to be 6.5 nm, corresponding to an average thickness of ca. 1.1 nm for a EuW30/PAH layer pair. The photoluminescent behavior of the film at room temperature was investigated to show the characteristic Eu3+ emission pattern of D-5(0)-->F-7(J). The fluorescence behavior of the multilayer film is essentially identical to that of H-n[EuP5W30O110]((12-n)-) in a concentrated aqueous solution, except for the relative intensities and peak bandwidths. The occurence of photoluminescent activity confirms the potential for creating luminescent multilayers with polyoxometalates (see ref. 23).

Layer-by-layer assembly of multilayer films consisting of silicotungstate and a cationic redox polymer on 4-aminobenzoic acid modified glassy carbon electrode and their electrocatalytic effects

A novel 4-aminobenzoic acid (4-ABA) monolayer film is formed on glassy carbon electrode (GCE) by amino cation radical method. Silicotungstic heteropolyanion (SiW12O404-, denoted as SiW12)-containing multilayer films have been fabricated on the 4-ABA modified GCE surface by alternate deposition with a quaternized poly(4-vinylpyridine) partially complexed with [Os(bpy)(2)Cl](2+/+) (denoted as QPVP-Os). Cyclic voltammetry (CV), X-ray photoelectron spectroscopy (XPS) and X-ray reflectivity (XR) have been used to characterise the as-prepared multilayer films. It is proved that the multilayer films are uniform and stable. The average thickness for a bilayer of QPVP-Os/SiW12 in the multilayer film is 30.2 Angstrom. The electrocatalytic activities of the multilayer films have been investigated on the reduction of three substrates of important analytical interests, HNO2, BrO3- and H2O2. Especially, the influence of layer number of the multilayer films on the electrocatalytic reduction of HNO2 has been investigated in detail. (C) 2000 Elsevier Science B.V. All rights reserved.