Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors


Autoria(s): Li C; Yang QQ; Ou HY; Wang QM
Data(s)

2000

Resumo

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

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IEEE.; IEEE Components, Packaging & Mfg Technol Soc.; Electe Indust Alliance.; ECA Electr Components, Assemblies, & Mat Assoc.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

IEEE.; IEEE Components, Packaging & Mfg Technol Soc.; Electe Indust Alliance.; ECA Electr Components, Assemblies, & Mat Assoc.

Identificador

http://ir.semi.ac.cn/handle/172111/13767

http://www.irgrid.ac.cn/handle/1471x/105065

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Li C; Yang QQ; Ou HY; Wang QM .Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors .见:IEEE .50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2000,1486-1488

Palavras-Chave #光电子学 #MIRRORS
Tipo

会议论文