Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
Data(s) |
2000
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Resumo |
A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted. A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:00Z (GMT). No. of bitstreams: 1 2936.pdf: 312607 bytes, checksum: bd4732a950ae84daf4ecc13fdc0c398d (MD5) Previous issue date: 2000 IEEE.; IEEE Components, Packaging & Mfg Technol Soc.; Electe Indust Alliance.; ECA Electr Components, Assemblies, & Mat Assoc. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE.; IEEE Components, Packaging & Mfg Technol Soc.; Electe Indust Alliance.; ECA Electr Components, Assemblies, & Mat Assoc. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
Fonte |
Li C; Yang QQ; Ou HY; Wang QM .Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors .见:IEEE .50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2000,1486-1488 |
Palavras-Chave | #光电子学 #MIRRORS |
Tipo |
会议论文 |