Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector
Data(s) |
2004
|
---|---|
Resumo |
A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2~1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times. 国家重点基础研究发展规划,国家高技术研究发展计划,国家自然科学基金 |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li Chuanbo;Mao Rongwei;Zuo Yuhua;Cheng Buwen;Shi Wenhua;Zhao Lei;Luo Liping;Yu Jinzhong;Wang Qiming.Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector,半导体学报,2004,25(12):1576-1579 |
Palavras-Chave | #光电子学 |
Tipo |
期刊论文 |