Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.

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国家自然科学基金（批准号：6 137 2 ）,国家自然科学基金（批准号：6989626 ）,国家自然科学基金（批准号：69776 36）,国家863计划（Nos.2 1AA122 32）,国家863计划（Nos.2 1AA312 8 ）

Institute of Semiconductors, The Chinese Academy of Sciences

国家自然科学基金（批准号：6 137 2 ）,国家自然科学基金（批准号：6989626 ）,国家自然科学基金（批准号：69776 36）,国家863计划（Nos.2 1AA122 32）,国家863计划（Nos.2 1AA312 8 ）