Si(100)衬底上n-3C-SiC／p-Si异质结构研究

利用LPCVD方法在Si(100)衬底上获得了3C-SiC外延膜，扫描电子显微镜(SEM)研究表明3C-SiC／p—Si界面平整、光滑，无明显的坑洞形成。研究了以In和Al为接触电极的3C-SiC／p—Si异质结的I—V，C-V特性及I—V特性的温度依赖关系，比较了In电极的3C-SiC／p—Si异质结构和以SiGe作为缓冲层的3C-SiC／SiGe／p—Si异质结构的I—V特性，实验发现引入SiGe缓冲层后，器件的反向击穿电压由40V提高到70V以上。室温下A1电极3C-SiC／p—Si二极管的最大反向击穿电压接近100V，品质因子为1．95。

提高（100）晶向磷化铟单晶的成晶率和质量的研究

通过对高压液封直接法单晶生长过程的热传输和影响熔体温度起伏的几个关键因素的分析，研究适全生长（100）晶向磷化铟单晶的热场系统，有效地降低了孪晶产生的几率，重复地生长出了整锭掺硫和掺铁的、直径为50mm和76mm的（100）磷化铟单晶。测试结果表明我们生长（100）磷化铟单晶的热场在生长过程中使晶锭保持较为平坦的固液界面，可稳定地获得具有低的缺陷密度和良好的电学均匀性的高质量磷化铟单晶材料。

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si(100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and apphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample, the stresses of 3C-SiC on Si(100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.

Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System

Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ～ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).

立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长

利用MOCVD生长技术在GaAs(100)衬底上生长了高质量的立方相AlGaN薄膜。通过光致发光（PL）、扫描电镜（SEM）分析了不同NH_3流量、不同生长温度对AlGaN外延层的结晶质量和表面形貌的影响。发现相对高的NH_3流量和相对高的生长温度可以提高AlGaN外延层的结晶质量。

在p-Si(100)上溅射法生长ZnO的结构和光学特性

室温下在p-Si(100)上采用直流反应磁控溅射法外延生长了ZnO薄膜。XRD测量表明了ZnO是高度c轴单一取向生长的，XRC测量则表明了ZnO的高质量。在室温下的PL测量中见到了带边发射，其强度与晶体质量有关。

Strain Analysis of Cubic AlGaN/GaNGrownon GaAs（100） Substrate by MOVPE

于2010-11-23批量导入

立方相Al_xGa_（1-x）N/GaAs（100）的光致发光研究

于2010-11-23批量导入

立方相GaN/GaAs（100）质量的X射线双晶衍射研究

于2010-11-23批量导入

γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长

国家计委八五计划,国家计委九五计划

电子束辐照对InP（100）表面硫钝化的增强作用

采用含有过量硫的(NH_4)_2S_x对InP(100)表面进行化学钝化和辉光放电电子束辐照处理,液氮下光致发光强度比未辐射的光致发光强度提高了1.5倍,比未钝化的提高了5倍.利用X射线光电子谱研究了电子辐照对InP表面硫钝化的影响.结果表明,硫钝化InP表面经电子束辐照可以促使S与InP更好的化合.

GaAs（100）的（NH4）2Sx和P2S5/（NH4）2Sx表面钝化

于2010-11-23批量导入