On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

A simulation model of body contact structure in PD SOI analogue circuit

As a solution of accurate simulation of the body effect in PD SOI analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. Based on this model, we have designed and simulated a sense amplifier that applied to V a 0.8um PD SOI 64K SRAM.

贵金属（Au, Ag, Pt, Pd）纳米材料的可控合成及性能研究

功能化的贵金属纳米材料的设计和可控制备在材料科学研究领域引起了人们广泛的关注。贵金属纳米材料的光学、电学、磁学和催化等物理和化学性质不但与其大小有关，而且还与其形貌息息相关。因此寻求简单而有效的低温溶液合成途径以实现对贵金属纳米材料的尺寸和形貌控制尤为重要。本论文的主要研究内容可以归纳如下： (1)在水溶液中利用种子生长方法分别制备了核壳Au-Pd/Pt三金属复合纳米粒子和三层的核壳AuAg复合纳米粒子。这些纳米粒子的尺寸和组成可以通过改变金种子的加入量来加以调控。 (2)通过种子生长和取代沉积相结合的方法制备了具有金核铂/银双金属壳的铃铛状纳米粒子。通过扫描电子显微镜、透射电子显微镜和X-射线光电子能谱对所得纳米粒子的尺寸、结构和组成进行了表征。 (3)以二肽甘氨酰甘氨酸作为模板合成了具有[111]取向的单晶银纳米片。通过改变实验条件探讨了片状银纳米结构的形成机理。片状银纳米结构的产率可达到80%，反应物之间的摩尔比对产物的尺寸和形貌有至关重要的作用。 (4)将K3[Fe(CN)6]和Na2S2O3的混合溶液进行水热处理，得到了具有立方体形貌的FeIIIFeIII(CN)6（柏林绿）微晶。实验结果显示K3[Fe(CN)6]和Na2S2O3的摩尔比及其浓度对所得产物的尺寸、形貌和组成有决定性的作用。 (5)在室温下通过混合3, 3', 5, 5'-四甲基联苯胺和氯铂酸，成功合成了有机-无机杂化的纳米纤维。纳米纤维的尺寸和形状可以通过改变反应物的比和浓度加以控制。基于不同的实验结果，提出了纳米纤维的可能形成机理。

n-Si半导体作为光电化学分解水阳极的稳定性研究

单晶Si由于它的禁带宽度（1.1ev）与太阳光谱相匹配，作为光活性电极材料被广泛研究。但它作为光阳极不稳定，易腐蚀。所以提高单晶Si作为光阳极时的稳定性就成了关键问题。我们所采用的是在n-Si表面沉积保护膜的方法。首先用电沉积法在n-Si表面沉积一层Pd，光电流得到了很大的提高。从未沉积Pd前的2mA／cm~2增加到29.1mA／cm~2（电极电位在1.5V vs，SCE），并且稳定性增强，能在光电解水体系中稳定工作4小时，但4小时后光电流衰减，所以在n-Si表面沉积Pd有一定的保护作用，但保护作用是有限的。我们在n-Si/Pd电极上用化学沉积法再沉积一层锰的氧化物膜，大大提高了电极的稳定性，在0.5MKOH溶液中，电位控制在0.4V（vs.SCE）时，可以稳定工作110小时。化学沉积锰氧化物膜的烧结温度为250℃（在N_2或Ar保护下），得到的锰氧化物膜经X－射线光电子能谱确定锰的价态为＋3价。RuO_2在n-Si/Pd/Mn_2O_3表面的沉积对氧的析出有催化作用，与未沉积前相比不电流起始电位负移了0.15V，比氧析出可逆电位负80mV [氧析出中逆电位在0.5M KOH溶液中（pH＝13.7）为0.18v（vs.SCE）]，沉积RuO_2的n-Si/Pd/Mn_2O_3/RuO_2电极，也具有同样好的稳定性，连续工作112小时光电流无明显变化。由交流阻抗法求得它的平带电位为-0.5V vs.SCE （0.5M KOH溶液）和0.0V vs.SCE（0.5M K_2SO_4溶液），并由此进一步得出它在0.5M KOH溶液中的能级结构。据此分析了n-Si电极在不加偏压下不能实现水的光电化学分解的原因。由光谱响应实验结果得到。沉积保护膜后的n-Si电极在整个可见光及近红外区内仍然有较好的光吸收。由光电流起始波长1130nm计算出的禁带宽度为1.1eV，与文献值一致。

GaAs中过渡族杂质Pd和Zr有关的深中心

采用结谱、光荧光等技术对Pd和Zt在GaAs中的光学和电学性质进行了研究.在GaAs:Pd中观测到三个能级,分别位于导带下0.4eV、0.60eV和价带上0.69eV.在GaAs:Zr中也观测到三个能级,分别位于导带下0.43eV和介带上0.32eV和0.55eV.基于深中心所表现出的Poole-Frenkel效应,讨论了一些中心对应的荷电态,对它们的俘获和对光致发光的影响也作了研究,结果表明:Pd和Zr在GaAs中均不是有效的复合中心.

GaAs中4d过渡杂质Mo与Pd的光电行为

4d过渡杂质Mo、Pd在GaAs中分别引入E（0．42eV）、H（0．61eV）和E（0．66eV）、H（0．69eV）等能级。根据过渡杂质Mo和Pd在GaAs中的光电行为, 推测这些杂质在GaAs中不起有效复合中心的作用。图4参3

Pd/c-Si界面反应研究

于2010-11-23批量导入

Pd/a-Si∶H界面反应研究

中科院基金

硅中Pd-B络合物性质的理论研究

于2010-11-23批量导入

Pd/a-Si:H界面的光电子能谱研究

其它基金

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network

　

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)

The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.