X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

High-speed electrooptical VOA integrated in silicon-on-insulator

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized. The HEMT materials have a mobility of 1035cm~2/(V ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. For the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic iransecmductance of IHfimS/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. The f_t, unit-current-gain frequency of the devices,is about 18. 8GHz.

Design and Fabrication of Ultracompact 3-dB MMI Coupler in Silicon-on-Insulator

An ultracompact 3-dB coupler is designed and fabricated in silicon-on-insulator,based on 12 line tapered multimode interference(MMI) coupler.Comparing with the conventional straigth MMI coupler,the device is-40% shorter in length.The device exhibits uniformity of 1.3dB and excess loss of 2.5dB

Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation

In this work, The TBS glass microspheres doped with Er3+ for morphology-dependent resonances of upconversion emission were designed. The glass sample components are 25TiO(2)-27BaCO(3)-8Ba(NO3)(2)-6ZnO(2)-9CaCO(3)-5H(3)BO(3)-10SiO(2)-7water glass-3Er(2)O(3) (wt%), and the emission spectra of TBS glass and a TBS glass microsphere (about 48 mum in diameter) were measured under 633 nm excitation and discussed. The strong morphology-dependent resonances of upconversion luminescences in the microsphere were observed. The observed resonances could be assigned by using the well-known Lorenz-Mie Formalism. (C) 2003 Elsevier Ltd. All rights reserved.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Controllable growth of semiconductor nanometer structures

Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed. (C) 2003 Elsevier Science Ltd. All rights reserved.

High-mobility pentacene thin-film transistors with copolymer-gate dielectric

Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PNIMA-GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10(5). In linear region (V-DS = -2V), the field-effect mobility of device increases with the increase in gate field at low-voltage region (V-G < - 20 V), and a mobility of 0.33 cm(2)/Vs can be obtained when V-G > 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/Vs can be obtained at V-G = -95V. The influence of voltage on mobility of device was investigated.

Oriented polyoxometalate-polycation multilayers on a carbon substrate

In this paper, a new method of fabricating multilayers on a carbon substrate is presented. First, a uniformly charged carbon surface was prepared through molecular design. Then an ultrathin film consisting of layer-pairs of oppositely charged polymeric cationic poly(diallyldimethylammonium chloride) (PDDA) and silicotungstate, SiW12O404- (SiW12), was grown layer-by-layer onto the grafted carbon substrate using a molecular self-assembly technique and an electrochemical method. The technique allows one to prepare highly adherent, dense and smooth films of polyoxometalates with special properties. By combining cyclic voltammetry (CV) and X-ray (XR) reflectometry, it was determined that the average surface density of SiW12 was 2.10 x 10(-10) mol cm(-2), and the thickness increase per adsorption of PDDA-SiW12 was 1.7 +/- 0.2 nm, indicating that the amount of SiW12 anion per one layer adsorption corresponded to a monolayer coverage. Atomic force microscopy (AFM) was also used to examine the surface morphology and determine the grain size distribution and roughness for multilayer films. An increase in root-mean-square (RMS) surface roughness from 7 to 9 Angstrom was observed as the number of layer-pairs in the film increased from 2 to 6. FTIR results showed that the good stability of the multilayer films was due to Coulomb interactions between the SiW12 anion and the polymeric cations PDDA. Moreover, the multilayer films, in acidic aqueous solution, showed good electrocatalytic activity toward the reduction of NO2-, and the catalytic currents increased with increasing the layer numbers of SiW12 adsorption. These characteristics of the multilayer films might find potential applications in the field of sensors and microelectronics devices.

Electrochemical preparation and characterization of silicotungstic heteropolyanion monolayer electrostatically linked aminophenyl on carbon electrode surface

In this paper, an organic-inorganic composite film of heteropolyanion was Formed by attaching a Keggin-type heteropolyanion, SiW12O404-, on carbon electrode surface derivatized by 4-aminophenyl monolayer. The composite film thus grafted on carbon electrode surface has good stability because of the ionic bonding character between SiW12O404- and surface aminophenyl groups. X-ray photoelectron spectroscopy, scanning tunneling microscopy, and cyclic voltammetry were used to characterize the composite film. Compared with SiW12O404- electrodeposited on a bare glassy carbon electrode (GCE), the composite film gives three more sharp and well-defined redox couples attributed to two one- and two-electron processes, and the analyses of the voltammograms of SiW12O404- anion in the composite film modified on GCE shows that its surface coverage is close to a closest packing monolayer. STM characterization shows that a two-dimensional order heteropolyanion monolayer was formed on HOPG substrate. The composite film provides a favorable environment for electron and proton transfer between SiW12O404- ion and electrode surface, which may make it suitable for various applications in sensors and microelectronics devices.

电离层胶片频高图数字化转换与分析研究

The ionogram acquired with the ionospheric vertical sounding method is the oldest data in the history of ionospheric research. Using of modern microelectronics and computer technology to digitalize, analyse and preserve the huge amount of historical film ionogram has become more and more important and urgent. This paper introduced the progress of the film ionogram digitalization by using digital image processing technologies to correct and repair film ionogram and convert them in an exchangeable format. An analysis and conversion software, basing on this method, has been developed for the film ionogram analysis, and then it introduces the application of this software by combining the SAO Explorer program for Wuhan film ionogram and pseudo-color ionogram in Yamagawa in Japan. It shows that our method is reliable，and the developed software is used friendly and provides a positive solution in digitalization and analysis of huge amount of historical film ionogram. Firstly, we briefly introduce the film ionogram and the process of its digitalization. By observing a amount of film ionogram, we obtain some common characteristics of the digitalized film ionogram following as: (1) the image rotation are caused by scanning; (2) the vertical axis of a large number of film ionogram exist more or less tilt and bending ; (3) coordinates of the film ionogram appear the non-uniformity phenomena result from the instability of driving motor rotation and the error of altitudinal cursor orientation. Moreover, based on the characteristics of the film ionogram and the SAO Explorer software which is widely used for the digital ionogram analysis in the world, a new method has been developed for film ionogram procession. The method contains the image geometric correction and film ionogram format conversion. The image geometric correction includes such as image rotation correction, vertical correction and coordinates scale correction. After geometric correction, the BMP file format images will be converted to the SBF file format images. Then, we also discuss the data format converting methods, which include two methods of the image data mapping basing on the normalization and logarithm, and the method of the preprocessing of the noise filtering and the threshold setting. Combining with SAO Explorer software, we successfully obtain ionospheric parameters and electron profile from the converted SBF file format digital ionograms. Based on the above method, we developed the software for the film ionogram to realize its correction analysis and conversion of the image format, and then give a introduction for its function and operation. Subsequently, the software are applied into the Wuhan film ionogram which separately observed in the high solar activity year and the low in 1980s last century. The results reveal the converted SBF digital ionogram almost preserve the all echo information of the film ionogram. Furthermore, we expressly discuss the application to the Wuhan film ionogram in 1958 in order to validate the applicability and credibility of the software. And it is showed that the important information of the film ionogram are maintained into the SBF digital ionogram. It is represented that there is credibility for conversion of the software when it applied in the older film ionogram. In sum, this software could apply to the digitalization and analysis of huge amount of historical film ionogram. Last, we extended the function of the software by bring some new conversion method and used it to apply to the pseudo-color ionogram of yamagawa in Japan. The results show that the converted ionogram information basically maintain the importantly ionogram information and the error of scaling of converted SBF file format image is almost acceptable, though there is no preprocessing for the original ionogram. Hence, we could extend the applicable range of the software and apply it to all kinds of simulative ionogram imaging by improving the method and software.

Wireless sensor node design for heterogeneous networks

Two complementary wireless sensor nodes for building two-tiered heterogeneous networks are presented. A larger node with a 25 mm by 25 mm size acts as the backbone of the network, and can handle complex data processing. A smaller, cheaper node with a 10 mm by 10 mm size can perform simpler sensor-interfacing tasks. The 25mm node is based on previous work that has been done in the Tyndall National Institute that created a modular wireless sensor node. In this work, a new 25mm module is developed operating in the 433/868 MHz frequency bands, with a range of 3.8 km. The 10mm node is highly miniaturised, while retaining a high level of modularity. It has been designed to support very energy efficient operation for applications with low duty cycles, with a sleep current of 3.3 μA. Both nodes use commercially available components and have low manufacturing costs to allow the construction of large networks. In addition, interface boards for communicating with nodes have been developed for both the 25mm and 10mm nodes. These interface boards provide a USB connection, and support recharging of a Li-ion battery from the USB power supply. This paper discusses the design goals, the design methods, and the resulting implementation.

Effect of solder volume on joint shape with variable chip-to-board contact pad ratio

The objective of this paper is to investigate the effect of the pad size ratio between the chip and board end of a solder joint on the shape of that solder joint in combination with the solder volume available. The shape of the solder joint is correlated to its reliability and thus of importance. For low density chip bond pad applications Flip Chip (FC) manufacturing costs can be kept down by using larger size board pads suitable for solder application. By using “Surface Evolver” software package the solder joint shapes associated with different size/shape solder preforms and chip/board pad ratios are predicted. In this case a so called Flip-Chip Over Hole (FCOH) assembly format has been used. Assembly trials involved the deposition of lead-free 99.3Sn0.7Cu solder on the board side, followed by reflow, an underfill process and back die encapsulation. During the assembly work pad off-sets occurred that have been taken into account for the Surface Evolver solder joint shape prediction and accurately matched the real assembly. Overall, good correlation was found between the simulated solder joint shape and the actual fabricated solder joint shapes. Solder preforms were found to exhibit better control over the solder volume. Reflow simulation of commercially available solder preform volumes suggests that for a fixed stand-off height and chip-board pad ratio, the solder volume value and the surface tension determines the shape of the joint.

Miniaturised multi-MEMS sensor development

Complex systems, from environmental behaviour to electronics reliability, can now be monitored with Wireless Sensor Networks (WSN), where multiple environmental sensors are deployed in remote locations. This ensures aggregation and reading of data, at lower cost and lower power consumption. Because miniaturisation of the sensing system is hampered by the fact that discrete sensors and electronics consume board area, the development of MEMS sensors offers a promising solution. At Tyndall, the fabrication flow of multiple sensors has been made compatible with CMOS circuitry to further reduce size and cost. An ideal platform on which to host these MEMS environmental sensors is the Tyndall modular wireless mote. This paper describes the development and test of the latest sensors incorporating temperature, humidity, corrosion, and gas. It demonstrates their deployment on the Tyndall platform, allowing real-time readings, data aggregation and cross-correlation capabilities. It also presents the design of the next generation sensing platform using the novel 10mm wireless cube developed by Tyndall.