High-speed electrooptical VOA integrated in silicon-on-insulator

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

于2010-11-23批量导入

zhangdi于2010-11-23 13:06:37导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:06:37Z (GMT). No. of bitstreams: 1 4776.pdf: 105181 bytes, checksum: e139cd3e7c042ed38ec240e0e8bc1bb7 (MD5) Previous issue date: 2003

National Natu-ral Science Foundation of China under Grant,"973" Project bythe National Science and Technology Ministry under Contract

Institute of Semiconductors, Chinese Academy of Sciences;Microelectronics R&D Center, Institute of Semiconductors, Chinese Academy of Sciences

National Natu-ral Science Foundation of China under Grant,"973" Project bythe National Science and Technology Ministry under Contract