High-mobility pentacene thin-film transistors with copolymer-gate dielectric


Autoria(s): Wang W; Shi JW; Jiang WH; Guo SX; Zhang HM; Quan BF; Ma DG
Data(s)

2007

Resumo

Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PNIMA-GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10(5). In linear region (V-DS = -2V), the field-effect mobility of device increases with the increase in gate field at low-voltage region (V-G < - 20 V), and a mobility of 0.33 cm(2)/Vs can be obtained when V-G > 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/Vs can be obtained at V-G = -95V. The influence of voltage on mobility of device was investigated.

Identificador

http://ir.ciac.jl.cn/handle/322003/13965

http://www.irgrid.ac.cn/handle/1471x/149728

Idioma(s)

英语

Fonte

Wang W;Shi JW;Jiang WH;Guo SX;Zhang HM;Quan BF;Ma DG.High-mobility pentacene thin-film transistors with copolymer-gate dielectric,MICROELECTRONICS JOURNAL,2007 ,38(1):27-30

Palavras-Chave #POLYMER INTEGRATED-CIRCUITS #ORGANIC TRANSISTORS #DRIVEN
Tipo

期刊论文