Controllable growth of semiconductor nanometer structures
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2003
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Resumo |
Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed. (C) 2003 Elsevier Science Ltd. All rights reserved. Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed. (C) 2003 Elsevier Science Ltd. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:04导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:04Z (GMT). No. of bitstreams: 1 2814.pdf: 255033 bytes, checksum: b1ac0cc92399d2a8944f665e4804aa61 (MD5) Previous issue date: 2003 Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER ADVANCED TECHNOLOGY OXFORD FULFILLMENT CENTRE THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND |
Fonte |
Wang ZG; Wu J .Controllable growth of semiconductor nanometer structures .见:ELSEVIER ADVANCED TECHNOLOGY .MICROELECTRONICS JOURNAL, 34 (5-8),OXFORD FULFILLMENT CENTRE THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,2003,379-382 |
Palavras-Chave | #半导体材料 #INAS QUANTUM DOTS #SELF-ORGANIZATION #MONOLAYER COVERAGE #DENSITY #GAAS #ISLANDS #INP(001) #EPITAXY |
Tipo |
会议论文 |