Monodromy calculations for some differential equations

In vielen Teilgebieten der Mathematik ist es w"{u}nschenswert, die Monodromiegruppe einer homogenen linearen Differenzialgleichung zu verstehen. Es sind nur wenige analytische Methoden zur Berechnung dieser Gruppe bekannt, daher entwickeln wir im ersten Teil dieser Arbeit eine numerische Methode zur Approximation ihrer Erzeuger.rnIm zweiten Abschnitt fassen wir die Grundlagen der Theorie der Uniformisierung Riemannscher Fl"achen und die der arithmetischen Fuchsschen Gruppen zusammen. Auss erdem erkl"aren wir, wie unsere numerische Methode bei der Bestimmung von uniformisierenden Differenzialgleichungen dienlich sein kann. F"ur arithmetische Fuchssche Gruppen mit zwei Erzeugern erhalten wir lokale Daten und freie Parameter von Lam'{e} Gleichungen, welche die zugeh"origen Riemannschen Fl"achen uniformisieren. rnIm dritten Teil geben wir einen kurzen Abriss zur homologischen Spiegelsymmetrie und f"uhren die $widehat{Gamma}$-Klasse ein. Wir erkl"aren wie diese genutzt werden kann, um eine Hodge-theoretische Version der Spiegelsymmetrie f"ur torische Varit"aten zu beweisen. Daraus gewinnen wir Vermutungen "uber die Monodromiegruppe $M$ von Picard-Fuchs Gleichungen von gewissen Familien $f:mathcal{X}rightarrow bbp^1$ von $n$-dimensionalen Calabi-Yau Variet"aten. Diese besagen erstens, dass bez"uglich einer nat"urlichen Basis die Monodromiematrizen in $M$ Eintr"age aus dem K"orper $bbq(zeta(2j+1)/(2 pi i)^{2j+1},j=1,ldots,lfloor (n-1)/2 rfloor)$ haben. Und zweitens, dass sich topologische Invarianten des Spiegelpartners einer generischen Faser von $f:mathcal{X}rightarrow bbp^1$ aus einem speziellen Element von $M$ rekonstruieren lassen. Schliess lich benutzen wir die im ersten Teil entwickelten Methoden zur Verifizierung dieser Vermutungen, vornehmlich in Hinblick auf Dimension drei. Dar"uber hinaus erstellen wir eine Liste von Kandidaten topologischer Invarianten von vermutlich existierenden dreidimensionalen Calabi-Yau Variet"aten mit $h^{1,1}=1$.

Finite-element discretization of 3D energy-transport equations for semiconductors

In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstrated in detail. We compare these new iterations with a standard method that is complemented by a feature to fit in the current context. A further innovation is the computation of solutions in three-dimensional domains, which are still rare. Special attention is paid to applicability of the 3D simulation tools. The programs are designed to have justifiable working complexity. The simulation results of some models of contemporary semiconductor devices are shown and detailed comments on the results are given. Eventually, we make a prospect on future development and enhancements of the models and of the algorithms that we used.

Numerical coupling of thermal-electric network models and energy-transport equations including optoelectronic semiconductor devices

In this work the numerical coupling of thermal and electric network models with model equations for optoelectronic semiconductor devices is presented. Modified nodal analysis (MNA) is applied to model electric networks. Thermal effects are modeled by an accompanying thermal network. Semiconductor devices are modeled by the energy-transport model, that allows for thermal effects. The energy-transport model is expandend to a model for optoelectronic semiconductor devices. The temperature of the crystal lattice of the semiconductor devices is modeled by the heat flow eqaution. The corresponding heat source term is derived under thermodynamical and phenomenological considerations of energy fluxes. The energy-transport model is coupled directly into the network equations and the heat flow equation for the lattice temperature is coupled directly into the accompanying thermal network. The coupled thermal-electric network-device model results in a system of partial differential-algebraic equations (PDAE). Numerical examples are presented for the coupling of network- and one-dimensional semiconductor equations. Hybridized mixed finite elements are applied for the space discretization of the semiconductor equations. Backward difference formluas are applied for time discretization. Thus, positivity of charge carrier densities and continuity of the current density is guaranteed even for the coupled model.

Spectral and variational characterizations of solutions to semilinear eigenvalue problems

Die vorliegende Arbeit befaßt sich mit einer Klasse von nichtlinearen Eigenwertproblemen mit Variationsstrukturin einem reellen Hilbertraum. Die betrachteteEigenwertgleichung ergibt sich demnach als Euler-Lagrange-Gleichung eines stetig differenzierbarenFunktionals, zusätzlich sei der nichtlineare Anteil desProblems als ungerade und definit vorausgesetzt.Die wichtigsten Ergebnisse in diesem abstrakten Rahmen sindKriterien für die Existenz spektral charakterisierterLösungen, d.h. von Lösungen, deren Eigenwert gerade miteinem vorgegeben variationellen Eigenwert eines zugehörigen linearen Problems übereinstimmt. Die Herleitung dieserKriterien basiert auf einer Untersuchung kontinuierlicher Familien selbstadjungierterEigenwertprobleme und erfordert Verallgemeinerungenspektraltheoretischer Konzepte.Neben reinen Existenzsätzen werden auch Beziehungen zwischenspektralen Charakterisierungen und denLjusternik-Schnirelman-Niveaus des Funktionals erörtert.Wir betrachten Anwendungen auf semilineareDifferentialgleichungen (sowieIntegro-Differentialgleichungen) zweiter Ordnung. Diesliefert neue Informationen über die zugehörigenLösungsmengen im Hinblick auf Knoteneigenschaften. Diehergeleiteten Methoden eignen sich besonders für eindimensionale und radialsymmetrische Probleme, während einTeil der Resultate auch ohne Symmetrieforderungen gültigist.

Analysis of nonlinear diffusion equations of second and fourth order

Wegen der fortschreitenden Miniaturisierung von Halbleiterbauteilen spielen Quanteneffekte eine immer wichtigere Rolle. Quantenphänomene werden gewöhnlich durch kinetische Gleichungen beschrieben, aber manchmal hat eine fluid-dynamische Beschreibung Vorteile: die bessere Nutzbarkeit für numerische Simulationen und die einfachere Vorgabe von Randbedingungen. In dieser Arbeit werden drei Diffusionsgleichungen zweiter und vierter Ordnung untersucht. Der erste Teil behandelt die implizite Zeitdiskretisierung und das Langzeitverhalten einer degenerierten Fokker-Planck-Gleichung. Der zweite Teil der Arbeit besteht aus der Untersuchung des viskosen Quantenhydrodynamischen Modells in einer Raumdimension und dessen Langzeitverhaltens. Im letzten Teil wird die Existenz von Lösungen einer parabolischen Gleichung vierter Ordnung in einer Raumdimension bewiesen, und deren Langzeitverhalten studiert.

Factorization method and inclusions of mixed type in an inverse elliptic boundary value problem

In various imaging problems the task is to use the Cauchy data of the solutions to an elliptic boundary value problem to reconstruct the coefficients of the corresponding partial differential equation. Often the examined object has known background properties but is contaminated by inhomogeneities that cause perturbations of the coefficient functions. The factorization method of Kirsch provides a tool for locating such inclusions. In this paper, the factorization technique is studied in the framework of coercive elliptic partial differential equations of the divergence type: Earlier it has been demonstrated that the factorization algorithm can reconstruct the support of a strictly positive (or negative) definite perturbation of the leading order coefficient, or if that remains unperturbed, the support of a strictly positive (or negative) perturbation of the zeroth order coefficient. In this work we show that these two types of inhomogeneities can, in fact, be located simultaneously. Unlike in the earlier articles on the factorization method, our inclusions may have disconnected complements and we also weaken some other a priori assumptions of the method. Our theoretical findings are complemented by two-dimensional numerical experiments that are presented in the framework of the diffusion approximation of optical tomography.

Mixed finite-element methods for elliptic convection-dominated problems arising in semiconductor physics

In this work we develop and analyze an adaptive numerical scheme for simulating a class of macroscopic semiconductor models. At first the numerical modelling of semiconductors is reviewed in order to classify the Energy-Transport models for semiconductors that are later simulated in 2D. In this class of models the flow of charged particles, that are negatively charged electrons and so-called holes, which are quasi-particles of positive charge, as well as their energy distributions are described by a coupled system of nonlinear partial differential equations. A considerable difficulty in simulating these convection-dominated equations is posed by the nonlinear coupling as well as due to the fact that the local phenomena such as "hot electron effects" are only partially assessable through the given data. The primary variables that are used in the simulations are the particle density and the particle energy density. The user of these simulations is mostly interested in the current flow through parts of the domain boundary - the contacts. The numerical method considered here utilizes mixed finite-elements as trial functions for the discrete solution. The continuous discretization of the normal fluxes is the most important property of this discretization from the users perspective. It will be proven that under certain assumptions on the triangulation the particle density remains positive in the iterative solution algorithm. Connected to this result an a priori error estimate for the discrete solution of linear convection-diffusion equations is derived. The local charge transport phenomena will be resolved by an adaptive algorithm, which is based on a posteriori error estimators. At that stage a comparison of different estimations is performed. Additionally a method to effectively estimate the error in local quantities derived from the solution, so-called "functional outputs", is developed by transferring the dual weighted residual method to mixed finite elements. For a model problem we present how this method can deliver promising results even when standard error estimator fail completely to reduce the error in an iterative mesh refinement process.

Virtual Compton scattering in baryon chiral perturbation theory

This thesis is concerned with the calculation of virtual Compton scattering (VCS) in manifestly Lorentz-invariant baryon chiral perturbation theory to fourth order in the momentum and quark-mass expansion. In the one-photon-exchange approximation, the VCS process is experimentally accessible in photon electro-production and has been measured at the MAMI facility in Mainz, at MIT-Bates, and at Jefferson Lab. Through VCS one gains new information on the nucleon structure beyond its static properties, such as charge, magnetic moments, or form factors. The nucleon response to an incident electromagnetic field is parameterized in terms of 2 spin-independent (scalar) and 4 spin-dependent (vector) generalized polarizabilities (GP). In analogy to classical electrodynamics the two scalar GPs represent the induced electric and magnetic dipole polarizability of a medium. For the vector GPs, a classical interpretation is less straightforward. They are derived from a multipole expansion of the VCS amplitude. This thesis describes the first calculation of all GPs within the framework of manifestly Lorentz-invariant baryon chiral perturbation theory. Because of the comparatively large number of diagrams - 100 one-loop diagrams need to be calculated - several computer programs were developed dealing with different aspects of Feynman diagram calculations. One can distinguish between two areas of development, the first concerning the algebraic manipulations of large expressions, and the second dealing with numerical instabilities in the calculation of one-loop integrals. In this thesis we describe our approach using Mathematica and FORM for algebraic tasks, and C for the numerical evaluations. We use our results for real Compton scattering to fix the two unknown low-energy constants emerging at fourth order. Furthermore, we present the results for the differential cross sections and the generalized polarizabilities of VCS off the proton.

Periodicities in the Hodgkin-Huxley model and versions of this model with stochastic input

A field of computational neuroscience develops mathematical models to describe neuronal systems. The aim is to better understand the nervous system. Historically, the integrate-and-fire model, developed by Lapique in 1907, was the first model describing a neuron. In 1952 Hodgkin and Huxley [8] described the so called Hodgkin-Huxley model in the article “A Quantitative Description of Membrane Current and Its Application to Conduction and Excitation in Nerve”. The Hodgkin-Huxley model is one of the most successful and widely-used biological neuron models. Based on experimental data from the squid giant axon, Hodgkin and Huxley developed their mathematical model as a four-dimensional system of first-order ordinary differential equations. One of these equations characterizes the membrane potential as a process in time, whereas the other three equations depict the opening and closing state of sodium and potassium ion channels. The membrane potential is proportional to the sum of ionic current flowing across the membrane and an externally applied current. For various types of external input the membrane potential behaves differently. This thesis considers the following three types of input: (i) Rinzel and Miller [15] calculated an interval of amplitudes for a constant applied current, where the membrane potential is repetitively spiking; (ii) Aihara, Matsumoto and Ikegaya [1] said that dependent on the amplitude and the frequency of a periodic applied current the membrane potential responds periodically; (iii) Izhikevich [12] stated that brief pulses of positive and negative current with different amplitudes and frequencies can lead to a periodic response of the membrane potential. In chapter 1 the Hodgkin-Huxley model is introduced according to Izhikevich [12]. Besides the definition of the model, several biological and physiological notes are made, and further concepts are described by examples. Moreover, the numerical methods to solve the equations of the Hodgkin-Huxley model are presented which were used for the computer simulations in chapter 2 and chapter 3. In chapter 2 the statements for the three different inputs (i), (ii) and (iii) will be verified, and periodic behavior for the inputs (ii) and (iii) will be investigated. In chapter 3 the inputs are embedded in an Ornstein-Uhlenbeck process to see the influence of noise on the results of chapter 2.