Estudio sobre la resistencia quimica de baldosas ceramicas no-esmaltadas para pavimentos industriales

The chemical resistance of ceramic tiles is the subject of the European Standard UNE-EN ISO 10545-13. In order to evaluate the effect of aqueous solutions of several chemicals agents on the aspect of the tile surface, this standard establishes a series of tests at room temperature followed by visual inspection. According to this standard the tiles of this study are classified as being of maximum resistance (UHA). However operating conditions can be more aggressive than those detailed in the standard. So, a systematic study has been undertaken. In the present work, the effect of aqueous solutions of several organic and inorganic acids on the tile surface is evaluated. Samples immersed in different solutions are subjected to the following conditions: T= 60º C; pH=2 and to agitation processes. Visual analysis, as well as optical microscopy and scanning electron microscopy (SEM) were performed in order to determine the possible variation of the superficial aspect of tiles. Moreover, atomic absorption spectrophotometry has been used in order to obtain quantitative information concerning the solubility of system M (III)-L (M= Fe; L= H2O or L= ligand). The results obtained show, in all cases, a progressive dissolution of iron oxide precipitates presents in the ceramic body

L'anatomia microscòpica de les plantes

The microscopic anatomy of plants. A review of the main treatises on Plant Microscopic Anatomy and their translations published along the XX century is followed by a discussion on various aspects of the structure in plant cells, methodological questions and teminology. Problems related to using dry specimens from herbaria for microscopic studies are considered. As an example, a study has been made on a species named in memory of Prof. Dr. Oriol de Bolòs, Delphinium bolosii (BLANCHÉ and MOLERO, 1983).

Defective TNF-alpha-mediated hepatocellular apoptosis and liver damage in acidic sphingomyelinase knockout mice

This study addressed the contribution of acidic sphingomyelinase (ASMase) in TNF-alpha-mediated hepatocellular apoptosis. Cultured hepatocytes depleted of mitochondrial glutathione (mGSH) became sensitive to TNF-alpha, undergoing a time-dependent apoptotic cell death preceded by mitochondrial membrane depolarization, cytochrome c release, and caspase activation. Cyclosporin A treatment rescued mGSH-depleted hepatocytes from TNF-alpha-induced cell death. In contrast, mGSH-depleted hepatocytes deficient in ASMase were resistant to TNF-alpha-mediated cell death but sensitive to exogenous ASMase. Furthermore, although in vivo administration of TNF-alpha or LPS to galactosamine-pretreated ASMase(+/+) mice caused liver damage, ASMase(-/-) mice exhibited minimal hepatocellular injury. To analyze the requirement of ASMase, we assessed the effect of glucosylceramide synthetase inhibition on TNF-alpha-mediated apoptosis. This approach, which blunted glycosphingolipid generation by TNF-alpha, protected mGSH-depleted ASMase(+/+) hepatocytes from TNF-alpha despite enhancement of TNF-alpha-stimulated ceramide formation. To further test the involvement of glycosphingolipids, we focused on ganglioside GD3 (GD3) because of its emerging role in apoptosis through interaction with mitochondria. Analysis of the cellular redistribution of GD3 by laser scanning confocal microscopy revealed the targeting of GD3 to mitochondria in ASMase(+/+) but not in ASMase(-/-) hepatocytes. However, treatment of ASMase(-/-) hepatocytes with exogenous ASMase induced the colocalization of GD3 and mitochondria. Thus, ASMase contributes to TNF-alpha-induced hepatocellular apoptosis by promoting the mitochondrial targeting of glycosphingolipids.

Medida de reflectancias en inmersión en aceite mediante el método directo y cálculo de n y k de 400 a 1100 nm.

Se ha centrado el problema en las mediciones en aceite en el directo para calcular n y k. Para ello se ha colocado una gota de aceite que se mantiene en contacto con la muestra mediante un cubreobjetos. Éste provoca una reflectancia adicional (efecto glare) que es necesario corregir. Se plantea el desarrollo matemático para esta corrección, y se realizan las comprobaciones con un sistema estándar.

Proceso automático para la medida de las reflectancias. 1.-Descripción preliminar

Para el cálculo de las constantes fsicas n, k, a partir de las medidas de reflectancia en dos medios de índice de refracción conocido y diferente, se necesita emplear criterios estadísticos, lo que obliga a obtener gran cantidad de datos experimentales y por consiguiente el cálculo es muy laborioso. Se describe el método automàtico utilizado para la simplificación de estas operaciones que permiten realizar dichos cálculos en gran rapidez.

The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

We have studied the effects of rapid thermal annealing at 1300¿°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3¿nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

Alloy inhomogeneities in InAlAs strained layers grown by MBE

Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.

Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics.