Alloy inhomogeneities in InAlAs strained layers grown by MBE
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
08/10/2012
|
| Resumo |
Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics , 1992 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Microscòpia electrònica #Pel·lícules fines #Feixos moleculars #Electron microscopy #Thin films #Molecular beams |
| Tipo |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
