Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
02/05/2012
|
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics, 1995 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Microscòpia electrònica #Semiconductors #Electron microscopy #Semiconductors |
| Tipo |
info:eu-repo/semantics/article |
