91 resultados para EQUIVALENT LAYERS


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A comparison of dc characteristics of fully depleted double-gate (DG) MOSFETs with respect to low-power circuit applications and device scaling has been performed by two-dimensional device simulation. Three different DG MOSFET structures including a conventional N+ polysilicon gate device with highly doped Si layer, an asymmetrical P+/N+ polysilicon gate device with low doped Si layer and a midgap metal gate device with low doped Si layer have been analysed. It was found that DG MOSFET with mid-gap metal, gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness). It is also found that an asymmetrical P+/N+ polysilicon gate DG MOSFET design offers comparable dc characteristics, but better parameter immunity to technology tolerances than a conventional DG MOSFET. (C) 2004 Elsevier Ltd. All rights reserved.

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The properties and characteristics of a recently proposed anisotropic metamaterial based upon layered arrays of tightly coupled pairs of "dogbone" shaped stripe conductors have been explored in detail. It has been found that a metamaterial composed of such stacked layers exhibits artificial magnetism and may support backward wave propagation. The equivalent network models of the constitutive conductor pairs arranged in the periodic array have been devised and applied to the identification of the specific types of resonances, and to the analysis of their contribution into the effective dielectric and magnetic properties of the artificial medium. The proposed "dogbone" configuration of conductor pairs has the advantage of being entirely realizable and assemblable in planar technology. It also appears more prospective than simple cut-wire or metal-plate pairs because the additional geometrical parameters provide an efficient control of separation between the electric and magnetic resonances that, in turn, makes it possible to obtain a fairly broadband left-handed behaviour of the structure at low frequencies.