Conduction mechanism in high-k ZrO2 gate dielectric films on strained-Ge layers

Autoria(s): Armstrong, Mervyn; Gamble, Harold
Data(s)

01/12/2003
Identificador

http://pure.qub.ac.uk/portal/en/publications/conduction-mechanism-in-highk-zro2-gate-dielectric-films-on-strainedge-layers(bfa2ffff-e523-4e23-90cd-cb8de25ab474).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M & Gamble , H 2003 , ' Conduction mechanism in high-k ZrO2 gate dielectric films on strained-Ge layers ' Paper presented at 2003 Intl Semiconductor Device Research Symp (IEEE Cat. No.03EX741), pp 29-30 , Washington , United States , 01/12/2003 - 01/12/2003 , pp. 29-30 .
Tipo

conferenceObject
Acesso ao item digital