Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

This paper proposes a drain current model for triple-gate n-type junctionless nanowire transistors. The model is based on the solution of the Poisson equation. First, the 2-D Poisson equation is used to obtain the effective surface potential for long-channel devices, which is used to calculate the charge density along the channel and the drain current. The solution of the 3-D Laplace equation is added to the 2-D model in order to account for the short-channel effects. The proposed model is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters. Experimental data of short- channel devices down to 30 nm at different temperatures have been also used to validate the model.

A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration

Purpose - The purpose of this paper is to develop an efficient numerical algorithm for the self-consistent solution of Schrodinger and Poisson equations in one-dimensional systems. The goal is to compute the charge-control and capacitance-voltage characteristics of quantum wire transistors. Design/methodology/approach - The paper presents a numerical formulation employing a non-uniform finite difference discretization scheme, in which the wavefunctions and electronic energy levels are obtained by solving the Schrodinger equation through the split-operator method while a relaxation method in the FTCS scheme ("Forward Time Centered Space") is used to solve the two-dimensional Poisson equation. Findings - The numerical model is validated by taking previously published results as a benchmark and then applying them to yield the charge-control characteristics and the capacitance-voltage relationship for a split-gate quantum wire device. Originality/value - The paper helps to fulfill the need for C-V models of quantum wire device. To do so, the authors implemented a straightforward calculation method for the two-dimensional electronic carrier density n(x,y). The formulation reduces the computational procedure to a much simpler problem, similar to the one-dimensional quantization case, significantly diminishing running time.

Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs

The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 mu m standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I-DS x V-GS curves were measured. After irradiation, the RGT off-state current (I-OFF) increased approximately two orders of magnitude reaching practically the same value of the I-OFF in the CGT, which only doubled its value. (C) 2011 Elsevier B.V. All rights reserved.

Asymptotic integral kernel for ensembles of random normal matrices with radial potentials

The method of steepest descent is used to study the integral kernel of a family of normal random matrix ensembles with eigenvalue distribution P-N (z(1), ... , z(N)) = Z(N)(-1)e(-N)Sigma(N)(i=1) V-alpha(z(i)) Pi(1 <= i<j <= N) vertical bar z(i) - z(j)vertical bar(2), where V-alpha(z) = vertical bar z vertical bar(alpha), z epsilon C and alpha epsilon inverted left perpendicular0, infinity inverted right perpendicular. Asymptotic formulas with error estimate on sectors are obtained. A corollary of these expansions is a scaling limit for the n-point function in terms of the integral kernel for the classical Segal-Bargmann space. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688293]

On the radial expansion of tubular structures in a quark-gluon plasma

We study the radial expansion of cylindrical tubes in a hot QGP. These tubes are treated as perturbations in the energy density of the system which is formed in heavy ion collisions at RHIC and LHC. We start from the equations of relativistic hydrodynamics in two spatial dimensions and cylindrical symmetry and perform an expansion of these equations in a small parameter, conserving the nonlinearity of the hydrodynamical formalism. We consider both ideal and viscous fluids and the latter are studied with a relativistic Navier-Stokes equation. We use the equation of state of the MIT bag model. In the case of ideal fluids we obtain a breaking wave equation for the energy density fluctuation, which is then solved numerically. We also show that, under certain assumptions, perturbations in a relativistic viscous fluid are governed by the Burgers equation. We estimate the typical expansion time of the tubes. (C) 2012 Elsevier B.V. All rights reserved.

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices

Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained devices has the major drawback of the stress non-uniformity, which cannot be easily considered in a device TCAD simulation without the coupled process simulation that is time consuming and cumbersome task. However, it is mandatory to have accurate device simulation, with good correlation with experimental results of strained devices, allowing for in-depth physical insight as well as prediction on the stress impact on the device electrical characteristics. This work proposes the use of an analytic function, based on the literature, to describe accurately the strain dependence on both channel length and fin width in order to simulate adequately strained triple-gate devices. The maximum transconductance and the threshold voltage are used as the key parameters to compare simulated and experimental data. The results show the agreement of the proposed analytic function with the experimental results. Also, an analysis on the threshold voltage variation is carried out, showing that the stress affects the dependence of the threshold voltage on the temperature. (C) 2011 Elsevier Ltd. All rights reserved.

Corneal wavefront-guided photorefractive keratectomy with mitomycin-C for hyperopia after radial keratotomy: Two-year follow-up

PURPOSE: To assess corneal wavefront-guided photorefractive keratectomy (PRK) to correct hyperopia after radial keratotomy (RK). SETTING: Sadalla Amin Ghanem Eye Hospital, Joinville, Santa Catarina, Brazil. DESIGN: Case series. METHODS: Excimer laser corneal wavefront-guided PRK with intraoperative mitomycin-C (MMC) 0.02% was performed. Main outcome measures were uncorrected (UDVA) and corrected (CDVA) distance visual acuities, spherical equivalent (SE), corneal aberrations, and haze. RESULTS: The mean time between RK and PRK in the 61 eyes (39 patients) was 18.8 years +/- 3.8 (SD). Before PRK, the mean SE was +4.17 +/- 1.97 diopters (D); the mean astigmatism, -1.39 +/- 1.04 D; and the mean CDVA, 0.161 +/- 0.137 logMAR. At 24 months, the mean values were 0.14 +/- 0.99 D (P<.001), -1.19 +/- 1.02 D (P=.627), and 0.072 +/- 0.094 logMAR (P<.001), respectively; the mean UDVA was 0.265 +/- 0.196 (P<.001). The UDVA was 20/25 or better in 37.7% of eyes and 20/40 or better in 68.9%. The CDVA improved by 1 or more lines in 62.3% of eyes. Two eyes (3.3%) lost 2 or more lines, 1 due to corneal ectasia. Thirty eyes (49.2%) were within +/- 0.50 D of intended SE and 45 (73.8%) were within +/- 1.00 D. From 6 to 24 months, the mean SE regression was +0.39 D (P<.05). A significant decrease in coma, trefoil, and spherical aberration occurred. Three eyes developed peripheral haze more than grade 1. CONCLUSION: Corneal wavefront-guided PRK with MMC for hyperopia after RK significantly improved UDVA, CDVA, and higher-order corneal aberrations with a low incidence of visually significant corneal haze.

Dendrimers/TiO2 nanoparticles layer-by-layer films as extended gate FET for pH detection

The layer-by-layer (LbL) technique combined with field-effect transistor (FET) based sensors has enabled the production of pH-sensitive platforms with potential application in biosensors. A variation of the FET architecture, so called separative extended gate FET (SEGFET) devices, are promise as an alternative to conventional ion sensitive FET (ISFET). SEGFET configuration exhibits the advantage of combining the field-effect concept with organic and inorganic materials directly adsorbed on the extended gate, allowing the test of new pH-sensitive materials in a simple and low cost way. In this communication, poly(propylene imine) dendrimer (PPI) and TiO2 nanoparticles (TiO2-np) were assembled onto gold-covered substrates via layer-by-layer technique to produce a low cost SEGFET pH sensor. The sensor presented good pH sensitivity, ca. 57 mV pH(-1), showing that our strategy has potential advantages to fabricate low cost pH-sensing membranes. (C) 2012 Elsevier B.V. All rights reserved.

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

The floating-body-RAM sense margin and retention-time dependence on the gate length is investigated in UTBOX devices using BJT programming combined with a positive back bias (so-called V th feedback). It is shown that the sense margin and the retention time can be kept constant versus the gate length by using a positive back bias. Nevertheless, below a critical L, there is no room for optimization, and the memory performances suddenly drop. The mechanism behind this degradation is attributed to GIDL current amplification by the lateral bipolar transistor with a narrow base. The gate length can be further scaled using underlap junctions.

Homogeneous metallicities and radial velocities for Galactic globular clusters

Well determined radial velocities and abundances are essential for analyzing the properties of the globular cluster system of the Milky Way. However more than 50% of these clusters have no spectroscopic measure of their metallicity. In this context, this work provides new radial velocities and abundances for twenty Milky Way globular clusters which lack or have poorly known values for these quantities. The radial velocities and abundances are derived from spectra obtained at the Ca II triplet using the FORS2 imager and spectrograph at the VLT, calibrated with spectra of red giants in a number of clusters with well determined abundances. For about half of the clusters in our sample we present significant revisions of the existing velocities or abundances, or both. We also confirm the existence of a sizable abundance spread in the globular cluster M 54, which lies at the center of the Sagittarius dwarf galaxy. In addition evidence is provided for the existence of a small intrinsic internal abundance spread (sigma[Fe/H](int) approximate to 0.11-0.14 dex, similar to that of M 54) in the luminous distant globular cluster NGC 5824. This cluster thus joins the small number of Galactic globular clusters known to possess internal metallicity ([Fe/H]) spreads.

Behavior of triple-gate Bulk FinFETs with and without DTMOS operation

In this paper, the combination of the Dynamic Threshold (DT) voltage technique with a non-planar structure is experimentally studied in triple-gate FinFETs. The drain current, transconductance, resistance, threshold voltage, subthreshold swing and Drain Induced Barrier Lowering (DIBL) will be analyzed in the DT mode and the standard biasing configuration. Moreover, for the first time, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance. Early voltage and intrinsic voltage gain will be studied experimentally and through three-dimensional (3-D) numerical simulations for different channel doping concentrations in triple-gate DTMOS FinFETs. The results indicate that the DTMOS FinFETs always yield superior characteristic; and larger transistor efficiency. In addition, DTMOS devices with a high channel doping concentration exhibit much better analog performance compared to the normal operation mode, which is desirable for high performance low-power/low-voltage applications. (C) 2011 Elsevier Ltd. All rights reserved.

Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs

A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian spectra on the gate voltage is addressed in this paper, which is different to the constant behavior expected for bulk transistors. The shift in the corner frequency makes the characterization process easier. It helps to identify the energy position, capture cross sections, and densities of the traps. This characterization task is carried out considering noise measurements of two different candidate structures for single-transistor dynamic random access memory devices.

Influence of normal and radial contributions of local current density on local electrochemical impedance spectroscopy

A new tri-electrode probe is presented and applied to local electrochemical impedance spectroscopy (LEIS) measurements. As opposed to two-probe systems, the three-probe one allows measurement not only of normal, but also of radial contributions of local current densities to the local impedance values. The results concerning the cases of the blocking electrode and the electrode with faradaic reaction are discussed from the theoretical point of view for a disk electrode. Numerical simulations and experimental results are compared for the case of the ferri/ferrocyanide electrode reaction at the Pt working electrode disk. At the centre of the disk, the impedance taking into account both normal and radial contributions was in good agreement with the local impedance measured in terms of only the normal contribution. At the periphery of the electrode, the impedance taking into account both normal and radial contributions differed significantly from the local impedance measured in terms of only the normal contribution. The radial impedance results at the periphery of the electrode are in good agreement with the usual explanation that the associated larger current density is attributed to the geometry of the electrode, which exhibits a greater accessibility at the electrode edge. (C) 2011 Elsevier Ltd. All rights reserved.

Analysis of temperature variation influence on the analog performance of 45 degrees rotated triple-gate nMuGFETs

This work presents the analog performance of n-type triple-gate MuGFETs with high-k dielectrics and TiN gate material fabricated in 45 degrees rotated SOI substrates comparing their performance with standard MuGFETs fabricated without substrate rotation. Different fin widths are studied for temperatures ranging from 250 K up to 400 K. The results of transconductance, output conductance, transconductance over drain current ratio, intrinsic voltage gain and unit-gain frequency are studied. It is observed that the substrate rotation improves the carrier mobility of narrow MuGFETs at any temperature because of the changing in the conduction plane at the sidewalls from (1 1 0) to (1 0 0). For lower temperatures, the improvement of the carrier mobility of rotated MuGFETs is more noticeable as well as the rate of mobility improvement with the temperature decrease is larger. The output conductance is weakly affected by the substrate rotation. Although this improvement in the transconductance of rotated MuGFETs is negligibly transferred to the intrinsic voltage gain, the unity-gain frequency of rotated device is improved due to the larger carrier mobility in the entire range of temperatures studied. (C) 2011 Elsevier Ltd. All rights reserved.

GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN metal gate showed a larger GIDL due to the different gate oxide thickness and a reduced metal gate work function. In addition, replacing SiON by a high-k dielectric (HfSiON) results for nMuGFETs in a decrease of the GIDL On the other hand, the impact of the gate dielectric on the GIDL for p-channel MuGFETs is marginal. The effect of the channel width was also studied, whereby narrow fin devices exhibit a reduced GIDL current in spite of the larger vertical electric field expected for these devices. Finally, comparing the effect of the channel type, an enhanced GIDL current for pMuGFET devices was observed. (C) 2011 Elsevier Ltd. All rights reserved.