GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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| Data(s) |
06/11/2013
06/11/2013
2012
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| Resumo |
This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN metal gate showed a larger GIDL due to the different gate oxide thickness and a reduced metal gate work function. In addition, replacing SiON by a high-k dielectric (HfSiON) results for nMuGFETs in a decrease of the GIDL On the other hand, the impact of the gate dielectric on the GIDL for p-channel MuGFETs is marginal. The effect of the channel width was also studied, whereby narrow fin devices exhibit a reduced GIDL current in spite of the larger vertical electric field expected for these devices. Finally, comparing the effect of the channel type, an enhanced GIDL current for pMuGFET devices was observed. (C) 2011 Elsevier Ltd. All rights reserved. CAPES CAPES CNPq/FWO CNPq/FWO FAPESP FAPESP |
| Identificador |
SOLID-STATE ELECTRONICS, OXFORD, v. 70, n. 1, supl. 1, Part 1, pp. 44-49, APR, 2012 0038-1101 http://www.producao.usp.br/handle/BDPI/42636 10.1016/j.sse.2011.11.015 |
| Idioma(s) |
eng |
| Publicador |
PERGAMON-ELSEVIER SCIENCE LTD OXFORD |
| Relação |
SOLID-STATE ELECTRONICS |
| Direitos |
closedAccess Copyright PERGAMON-ELSEVIER SCIENCE LTD |
| Palavras-Chave | #SOI MULTIPLE GATE FET (MUGFET) #TIN METAL GATE #HIGH-K DIELECTRIC #GIDL #CHANNEL WIDTH #INDUCED-DRAIN-LEAKAGE #EFFECTIVE WORK FUNCTION #MOSFETS #TECHNOLOGY #STACKS #ENGINEERING, ELECTRICAL & ELECTRONIC #PHYSICS, APPLIED #PHYSICS, CONDENSED MATTER |
| Tipo |
article original article publishedVersion |
