Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
07/11/2013
07/11/2013
2012
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| Resumo |
A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian spectra on the gate voltage is addressed in this paper, which is different to the constant behavior expected for bulk transistors. The shift in the corner frequency makes the characterization process easier. It helps to identify the energy position, capture cross sections, and densities of the traps. This characterization task is carried out considering noise measurements of two different candidate structures for single-transistor dynamic random access memory devices. Ministerio de Educacion y Ciencia FEDER [TEC2010-16211] IMEC Core Partners through the FBRAM program |
| Identificador |
IEEE TRANSACTIONS ON ELECTRON DEVICES, PISCATAWAY, v. 59, n. 10, pp. 2780-2786, OCT, 2012 0018-9383 http://www.producao.usp.br/handle/BDPI/43024 10.1109/TED.2012.2208970 |
| Idioma(s) |
eng |
| Publicador |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC PISCATAWAY |
| Relação |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Direitos |
restrictedAccess Copyright IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Palavras-Chave | #FULLY DEPLETED (FD) TRANSISTOR #LOW-FREQUENCY NOISE (LFN) #MULTIGATE TRANSISTORS #NOISE MODELING #SIMULATION OF ELECTRONIC DEVICES #P-N-JUNCTIONS #TRANSISTORS #MEMORY #CELL #RAM #ENGINEERING, ELECTRICAL & ELECTRONIC #PHYSICS, APPLIED |
| Tipo |
article original article publishedVersion |
