Boiling heat transfer enhancement by using micro-pin-finned surface for electronics cooling

For efficiently cooling electronic components with high heat flux, experiments were conducted to study the flow boiling heat transfer performance of FC-72 over square silicon chips with the dimensions of 10 × 10 × 0.5 mm3. Four kinds of micro-pin-fins with the dimensions of 30 × 60, 30 × 120, 50 × 60, 50 × 120 μm2 (thickness, t × height, h) were fabricated on the chip surfaces by the dry etching technique for enhancing boiling heat transfer. A smooth surface was also tested for comparison. The experiments were made at three different fluid velocities (0.5, 1 and 2 m/s) and three different liquid subcoolings (15, 25 and 35 K). The results were compared with the previous published data of pool boiling. All micro-pin-fined surfaces show a considerable heat transfer enhancement compared with a smooth surface. Flow boiling can remarkably decrease wall superheat compared with pool boiling. At the velocities lower than 1 m/s, the micro-pin-finned surfaces show a sharp increase in heat flux with increasing wall superheat. For all surfaces, the maximum allowable heat flux, qmax, for the normal operation of LSI chips increases with fluid velocity and subcooling. For all micro-pin-finned surfaces, the wall temperature at the critical heat flux (CHF) is less than the upper limit for the reliable operation of LSI chips, 85◦C. The largest value of qmax can reach nearly 148 W/cm2 for micro-pin-finned chips with the fin height of 120 μm at the fluid velocity of 2 m/s and the liquid subcooling of 35 K. The perspectives for the boiling heat transfer experiment of the prospective micro-pin-finned sur- faces, which has been planned to be made in the Drop Tower Beijing/NMLC in the future, are also presented.

GaAs/AlGaAs MQW材料激子吸收谱的电场效应及pin结构自电光效应器件（SEED)的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

高速PIN 光电探测器的散射参量测量和TO 封装

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

PIN结构氮化镓基紫外探测器及其制作方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

提高GaN基pin结构性能的紫外探测器及制作方法

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1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Nanocrystalline silicon films with high conductivity and the application for PIN solar cells

Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

高锗组分PIN锗硅光电探测器设计与模拟

介绍了Si1-xGex合金材料在制作新型光电子器件方面的重要作用,描述了应变SiGe层的特性,包括其临界厚度与Ge组分的关系、能带变窄、折射率增加,以及应变SiGe层的亚稳态特性.设计了应变锗硅缓冲层上的高Ge组分PIN光电探测器的外延材料和结构,采用Silvaco软件分别对光电探测器的器件结构、光谱响应、响应电流及其随入射光功率的变化、器件的暗电流进行了模拟,结果显示,探测器有源区面积增大,其响应电流也增大,且暗电流比其响应电流小6～8个数量级;探测器的响应时间约为3.8x10~(-9)s;探测器在850nm左右具有较好的光响应;这些结果都比较理想.采用L-edit软件设计了该光电探测器的结构,最后对研究结果做出总结.

非晶硅Pin二极管的1MeV电子幅照效应

报道a-Si:H本征膜及Pin二极管的1MeV1.4×10~(15),4.2×10~(15),8.4×10~(15)/cm~2电子幅照实验结果和退火行为。测量了电子辐照对a-Si:H光暗电导率和光致发光谱的影响，以及a-Si:H Pin二极管光伏特性和光谱响应随电子辐照剂量的变化。发现电子辐照在a-Si:H本征膜和二极管中引起严重的损伤，和二极管光谱响应的峰值“红移”。但未见饱和现象，还观测到明显的室温恢复现象；但高温退火处理后未能完全恢复。该文对以上实验结果给出了合理的解释。

MOCVD生长的平面型InGaAs/InP PIN光电探测器件

讨论了采了MOCVD技术生长的平面型InGaAs／InP PIN器件的光学特性及制备工艺。通过引入InP窗口层并制备合适的抗反射膜, 提高了器件的量子效率, 达到～90％, 采用平面型结构有可能改善器件的稳定性和可靠性。图3参5

电制冷Si-PIN X射线谱仪的研制

X射线谱仪以其多用途、无损、操作简单、快速、价格低廉和运行费用很低等优点，己经成为应用最为广泛的多元素分析仪器。采用液氮冷却的X射线谱仪在荧光分析技术领域得到广泛的应用和普遍认可。液氮制冷的一个主要缺点是必须有一个液氮存储罐作为完整谱仪的一部分。从而，在实际应用中受到液氮价格贵和液氮供应厂少的限制，大大地制约了该种谱仪的进一步推广使用。如果能采用另外的技术得到足够低的温度，在此温度下探测器具有极低的漏电流，也可使X射线谱仪有极低的噪声和相当好的能量分辨率；因此克服上述限制就成为一个有重要意义的课题方向。本文在国内首次实现采用半导体电制冷技术对平面离子注入（Si一PIN）探测器制冷，降低探测器漏电流至10~(-13)以下，配合低噪声脉冲光反馈前放，成功地使得整个x射线谱仪能量分辨率达到262eV（对~(55)Fe的Mn Kα K射线）。虽然电制冷X射线谱仪的分辨率没有采用液氮冷却的好，但是它的性能已足够在包括利用X射线能量分离进行荧光分析等多种应用所需。考虑到元素周期表中钾元素以上的毗邻两元素的Ka特征X射线的能量差在380eV以上；例如，K和Ca的峰线宽分别是243eV和245 eV，由此得到电制冷X射线谱仪己可完成对K, C a和更高Z的元素进行能散荧光分析工作。并且，液氮罐的取消可方便的设计在野外使用的便携式X射线荧光分析设备。 文中全面介绍了X射线谱仪的各个组成部分和其背景知识。并详细描述了探测器系统、电制冷系统和低噪声电子学系统，充分展示了研制X射线谱仪的关键所在。最后给出了电制冷X射线谱仪的测试结果和应用设计。

Direct Numerical Simulation of a Spatially Evolving Supersonic Turbulent Boundary Layer at Ma=6

Direct numerical simulation is carried out for a spatially evolving supersonic turbulent boundary layer at free-stream Mach number 6. To overcome numerical instability, the seventh-order WENO scheme is used for the convection terms of Navier-Stokes equations, and fine mesh is adopted to minimize numerical dissipation. Compressibilty effects on the near-wall turbulent kinetic energy budget are studied. The cross-stream extended self-similarity and scaling exponents including the near-wall region are studied. In high Mach number flows, the coherence vortex structures are arranged to be smoother and streamwised, and the hair-pin vortices are less likely to occur.

Microstructure and Tribological Properties of Laser Clad gamma/Cr7C3/Tic Composite Coatings on gamma-TiA1 Intermetallic Alloy

In order to improve the wear resistance of the gamma-TiAl intermetallic alloy, microstructure, room- and high-temperature (600 degrees C) wear behaviors of laser clad gamma/Cr7C3/TiC composite coatings with different constitution of NiCr-Cr3C2 precursor-mixed powders have been investigated by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy-dispersive spectrometer (EDS), block-on-ring (room-temperature) and pin-on-disk (high-temperature) wear tests. The responding wear mechanisms are discussed in detail. Results show that microstructures of the laser clad composite coatings have non-equilibrium solidified microstructures consisting of primary hard Cr7C3 and TiC carbides and the inter-primary gamma/Cr7C3 eutectic matrix, about three to five times higher average microhardness compared with the TiAl alloy substrate. Higher wear resistance than the original TiAl alloy is achieved in the clad composite coatings under dry sliding wear conditions, which is closely related to the formation of non-equilibrium solidified reinforced Cr7C3 and TiC carbides and the positive contribution of the relatively ductile and tough gamma/Cr7C3 eutectics matrix and their stability under high-temperature exposure.