198 resultados para hydrogen relativistic atom
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
he first order perturbations of the energy levels of a stationary hydrogen atom in a static external gravitational field, with Schwarzschild metric, are investigated. The energy shifts are calculated for the relativistic 1S, 2S, 2P, 3S, 3P, 3D, 4S, 4P, 4D, and 4F levels. The results show that the energy-level shifts of the states with total angular momentum quantum number 1/2 are all zero, and the ratio of absolute energy shifts with total angular momentum quantum number 5/2 is 145. This feature can be used to help us to distinguish the gravitational effect from other effects.
Resumo:
The first-order perturbations of the energy levels of a hydrogen atom in central internal gravitational field are investigated. The internal gravitational field is produced by the mass of the atomic nucleus. The energy shifts are calculated for the relativistic 1S, 2S, 2P, 3S, 3P, 3D, 4S, and 4P levels with Schwarzschild metric. The calculated results show that the gravitational corrections are sensitive to the total angular momentum quantum number.
Resumo:
We apply a scattering theory of nonperturbative quantum electrodynamics to study the photoelectron angular distributions (PADs) of a hydrogen atom irradiated by linearly polarized laser light. The calculated PADs show main lobes and jetlike structure. Previous experimental studies reveal that in a set of above-threshold-ionization peaks when the absorbed-photon number increases by one, the jet number also increases by one. Our study confirms this experimental observation. Our calculations further predict that in some cases three more jets may appear with just one-more-photon absorption. With consideration of laser-frequency change, one less jet may also appear with one-more-photon absorption. The jetlike structure of PADs is due to the maxima of generalized phased Bessel functions, not an indication of the quantum number of photoelectron angular momentum states.
Resumo:
Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.
Resumo:
GaN epilayers grown by molecular beam epitaxy using NH3 as the nitrogen source were found to contain hydrogen. We further notice that the background electron concentration in GaN can be correlated with the amount of hydrogen contaminant. X-ray photoelectron spectroscopy (XPS) measurements of the N Is peak reveal that hydrogen is bound to nitrogen. This will make the corresponding Ga atom see insufficient N counterpart, as can be inferred from the XPS Ga 3d spectrum. We then think that nitrogen in the lattice terminated by hydrogen is an effective nitrogen vacancy and hence a donor accounting for the background electrons.
Resumo:
High-frequency vibrational modes have been observed at liquid-helium temperature in silicon samples grown in a H-2 or D-2 atmosphere. The highest-frequency ones are due to the overtones and combination modes of SiH fundamentals. Others are CH modes due to (C,H) complexes, but the simultaneous presence of NH modes due to (N,H) complexes cannot be excluded. The present results seem to show also the existence of centers including both SiH and CH or NH bonds. One sharp mode at 4349 cm-l is related to a weak SiH fundamental at 2210 cm(-1). The related center is ascribed to a vacancy fully decorated with hydrogen with a nearest-neighbor C atom. [S0163-1829(99)00911-X].
Resumo:
Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 me V below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.
Resumo:
Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by FTIR. Especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. New LVMs related to hydrogen will be reported in this paper. Dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating InP obtained by high pressure, high temperature annealing of ultra purity materials is proposed. Hydrogen can acts as actuator for antistructure defects production. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effects are discussed.
Resumo:
Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.
Resumo:
The direct Coulomb ionization process can be generally well described by the ECPSSR theory, which bases on the perturbed-stationary- state(PSS) and accounts for the energy-loss, Coulomb-deflection, and relativistic effects. But the ECPSSR calculation has significant deviations for heavy projectile at low impinging energies. In this paper we propose a new modified ECPSSR theory, i.e. MECUSAR, in which PSS is replaced by an united and separated atom model, and molecule-orbit effect is considered. The MECUSAR calculations give better agreement with the experimental data at lower impinging energies, and agree with the ECPSSR calculations at high energies. By using OBKN (Oppenheimer-Brinkman-Kramers formulas of Nikolaev) theory to describe the contribution of the electron capture, we further modified the proposed MECUSAR theory, and calculated the target ionization cross sections for different charge states of the projectile.
Resumo:
Diblock polyampholyte brushes with different block sequences (Si/SiO2/poly(acrylic acid)-b-poly (2-vinylpyridine) (PAA-b-P2VP) brushes and Si/SiO2/P2VP-b-PAA brushes) and different block lengths were synthesized by sequent surface-initiated atom transfer radical polymerization (ATRP). The PAA block was obtained through hydrolysis from the corresponding poly(tert-butyl acrylate). The polyampholyte brushes demonstrated unique pH-responsive behavior. In the intermediate pH region, the brushes exhibited a less hydrophilic wetting behavior and a rougher surface morphology due to the formation of polyelectrolyte complex through electrostatic interaction between oppositely charged blocks. In the low pH and high pH regions, the rearrangement of polyampholyte brushes showed great dependence on the block sequence and block length. The polyampholyte brushes with P2VP-b-PAA sequence underwent rearrangement during alternative treatment by acidic aqueous solution (low pH value) and basic aqueous solution (high pH value).
Resumo:
The structure of the title compound, [Co(C12H8N2)(H2O)(4)]-(NO3)(2), consists of tetraaqua(1,10- phenanthroline)cobalt(II) cations and nitrate anions. The Co atom is located on a twofold rotation axis and is coordinated by the two N atoms of a 1,10-phenanthroline ligand and four O atoms of water molecules. The cations and anions are linked by hydrogen-bond interactions into a three-dimensional supramolecular network.
Resumo:
SmCl3, reacted with CpNa (Cp = Cyclopentadienyl) in the ratio of 1:3 in THF, which then was reacted with (S)-(+)-N-1-(phenylethyl) salicylideneamine/toluene to yield the title complex, [GRAPHICS] The X-ray crystal structure determination of the title complex reveals that 1 is a dimer with intramolecular C-C bond formation and hydrogen transfer, which leads to the configuration turnover of the carbon atom at the benzyl position of the ligand, while those of the newly formed asymmetric centers may have either Ii or S type configurations. (C) 1998 Elsevier Science Ltd. All rights reserved.
Resumo:
Experimental investigations on the ignition and combustion stabilization of kerosene with pilot hydrogen in Mach 2.5 airflows were conducted using two test combustors, with cross sections of 30.5 x 30 and 51 x 70 mm, respectively. Various integrated modules, including the combinations of different pilot injection schemes and recessed cavity flameholders with different geometries, were designed and tested. The stagnation pressure of vitiated air varied within the range of 1.1-1.8 NiPa, while the stagnation temperature varied from 1500 to 1900 K. Specifically, effects of the pilot hydrogen injection scheme, cavity geometry, and combustor scaling on the minimally required pilot hydrogen equivalence ratio were systematically examined. Results indicated that the cavity depth and length had significant effects on the ignition and flameholding, whereas the slanted angle of the aft wall was relatively less important. Two cavities in tandem were shown to be a more effective flameholding mechanism than that with a single cavity. The minimally required pilot hydrogen equivalence ratio for kerosene ignition and stable combustion was found to be as low as 0.02. Furthermore, combustion efficiency of 80% was demonstrated to be achievable for kerosene with the simultaneous use of pilot hydrogen and a recessed cavity to promote the ignition and global burning.