Hydrogen contaminant and its correlation with background electrons in GaN
Data(s) |
1999
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Resumo |
GaN epilayers grown by molecular beam epitaxy using NH3 as the nitrogen source were found to contain hydrogen. We further notice that the background electron concentration in GaN can be correlated with the amount of hydrogen contaminant. X-ray photoelectron spectroscopy (XPS) measurements of the N Is peak reveal that hydrogen is bound to nitrogen. This will make the corresponding Ga atom see insufficient N counterpart, as can be inferred from the XPS Ga 3d spectrum. We then think that nitrogen in the lattice terminated by hydrogen is an effective nitrogen vacancy and hence a donor accounting for the background electrons. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang JP; Sun DZ; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Hydrogen contaminant and its correlation with background electrons in GaN ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1999,14(5):403-405 |
Palavras-Chave | #半导体材料 #GALLIUM NITRIDE #FILMS #DONOR |
Tipo |
期刊论文 |