HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE


Autoria(s): ZHONG L; WANG ZG; WAN S; ZHU JB; SHIMURA F
Data(s)

1992

Resumo

Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 me V below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

Identificador

http://ir.semi.ac.cn/handle/172111/14169

http://www.irgrid.ac.cn/handle/1471x/101119

Idioma(s)

英语

Fonte

ZHONG L; WANG ZG; WAN S; ZHU JB; SHIMURA F.HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING ,1992,55(4):313-316

Palavras-Chave #半导体材料 #BANDS
Tipo

期刊论文