Hydrogen related defects in InP
| Data(s) |
1998
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| Resumo |
Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by FTIR. Especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. New LVMs related to hydrogen will be reported in this paper. Dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating InP obtained by high pressure, high temperature annealing of ultra purity materials is proposed. Hydrogen can acts as actuator for antistructure defects production. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effects are discussed. Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by FTIR. Especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. New LVMs related to hydrogen will be reported in this paper. Dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating InP obtained by high pressure, high temperature annealing of ultra purity materials is proposed. Hydrogen can acts as actuator for antistructure defects production. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effects are discussed. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:21Z (GMT). No. of bitstreams: 1 3042.pdf: 265619 bytes, checksum: ecf725452415496591609cf82ca78bb3 (MD5) Previous issue date: 1998 Electrochem Soc, Electr Div. Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Electrochem Soc, Electr Div. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELECTROCHEMICAL SOCIETY INC 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA |
| Fonte |
Han YJ; Liu XL; Jiao JH; Lin LY .Hydrogen related defects in InP .见：ELECTROCHEMICAL SOCIETY INC .PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 98 (2),65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA ,1998,351-358 |
| Palavras-Chave | #半导体材料 |
| Tipo |
会议论文 |
