Hydrogen behavior in GaN epilayers grown by NH3-MBE
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2001
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Resumo |
Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved. Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:17导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:17Z (GMT). No. of bitstreams: 1 2912.pdf: 192411 bytes, checksum: 0d2a19b323cfd4da550f5ff0c072a8c5 (MD5) Previous issue date: 2001 China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Fonte |
Kong MY; Zhang JP; Wang XL; Sun DZ .Hydrogen behavior in GaN epilayers grown by NH3-MBE .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,371-375 |
Palavras-Chave | #半导体材料 #impurities #molecular beam epitaxy #nitrides #semiconducting III-V materials #GALLIUM NITRIDE #SAPPHIRE SUBSTRATE #DEFECTS #HETEROSTRUCTURE #SEMICONDUCTORS #STRESS |
Tipo |
会议论文 |