急倾斜金属矿体开采岩体移动规律与变形趋势预测研究

Rockmass movement due to mining steep metallic ore body is a considerable question in the surface movement and deformation issue caused by underground mining. Research on coal mining induced rockmass movement and its prediction problem have been performed for a long-term, and have achieved great progress at home and abroad. However, the rockmass movement caused by mining steep metal mine is distinctivly different from coal seam mining.. Existing surface movement laws and deformation prediction methods are not applicable to the rockmass movement caused by mining steep metal mine. So far the home and abroad research to this theory is presently at an early stage, and there isn’t mature theory or practical prediction method, which made a great impact on production. In this paper, the research object—Jinchuan nickel mine, which is typical steep metal mine, characterized by complex geological conditions, developed faults, cracked rockmass, high geostress, and prominent engineering stability problems. In addition, backfill mining method is used in the mine, the features of rockmass movement caused by this mining method are also different from other mining methods. In this paper, the laws of rock mass movement, deformation and destroy mechanism, and its prediction were analyzed based on the collection of data, detailed in-sit engineering geology survey, ground movement monitoring by GPS, theoretical analysis and numerical simulation. According to the GPS monitoring of ground surface movement, ground subsidence basin with apparent asymmetry is developing, the influence scope is larger in the upper faulted block than in the lower faulted block, and the center of ground movement is moving along the upper faulted block direction with increasing depth of mining. During the past half and seven years, the largest settlement has amounted to 1287.5mm, and corresponding horizontal displacement has amounted to 664.6mm. On the ground surface, two fissure belts show a fast-growing trend of closure. To sum up, mining steep metal mine with backfill method also exist the same serious problem of rockmass movement hazards. Fault, as a low intensity zone in rockmass, when it located within the region of mining influence, the change of potential energy mainly consumed in fault deformation associated with rockmass structure surface friction, which is the essence of displacement and stress barrier effects characterized by fault rupture zone. when steep fault located in the tensile deformation region incurred by underground excavation, no matter excavation in hangingwall or in footwall of the fault, there will be additional tensile stress on the vertical fault plane and decrease in the shear strength, and always showing characteristics of normal fault slip, which is the main reason of fault escarpment appeared on the ground surface. The No.14 shaft deformation and failure is triggered by fault activation, which showed with sidewall move, rupture, and break down features as the main form of a concentrated expression of fault effects. The size and orientation of principal stress in surrounding rock changed regularly with mining; therefore, roadway deformation and damage at different stages have different characteristics and distribution models. During the process of mining, low-intensity weak structures surface always showed the most obvious reaction, accompany with surface normal stress decrease and shear strength bring down, to some extent, occurred with relative slide and deformation. Meanwhile, the impact of mining is a relatively long process, making the structure surface effect of roadway deformation and damage more prominent than others under the influence of mining. Roadway surrounding rockmass deformation caused by the change of strain energy density field after excavation mainly belongs to elastic deformation, and the correspondented damage mainly belongs to brittle rupture, in this circumstance, surrounding rockmass will not appear large deformation. The large deformation of surrounding rockmass can only be the deformation associated with structure surface friction or the plastic deformation of itself, which mainly caused by the permanent self-weigh volume force，and long-term effect of mining led to the durability of this deformation Good pitting fill effect and supporting effect of backfill, as well as the friction of rockmass structure surface lead to obvious macro-rockmass movement with long-lag characteristics. In addition, the loss of original intensity and new structure surface arisen increased flexibility in rockmass and fill deformation in structure surface, which made the time required for rockmass potential energy translate into deformation work associated with plastic deformation and structure surface friction consumed much, and to a large extent, eliminated the time needed to do those plastic work during repeated mining, all of which are the fundamental reason of rockmass movement aftereffect more significant than before. Mining steep deposits in high tectonic stress area and in gravity stress area have different movement laws and deformation mechanism. The steep deposit, when the vertical size of the mining areas is smaller than the horizontal size of the orebody, no matter mining in gravity stress area or in high tectonic stress area, they have similar features of ground movement with mining horizontal orebody; contrarily, there will appear double settlement centers on the ground surface under the condition of mining in high tectonic stress area, while there will always be a single center under the other condition. Meanwhile the ground movement lever, scale of mining influence area and macro features of ground movement, deformation and fracture are also different from mining in gravity stress area, and the fundamental reason lies in the impact of orientation of the maximum principal stress on rock movement features in in-site rock stress field. When mining thick and steep deposit, the ground surface movement and deformation characteristic curves are significantly different from excavating the horizontal ore bed and thin steep deposit. According to the features of rockmass movement rate, the development process of mining-induced rockmass movement is divided into three stages: raising stage, steadily stage and gradually decay stage. Considering the actual exploitation situation, GPS monitoring results and macro-characteristics of surface movement, the current subsidence pattern of Jinchuan No.2 mine is in the early stage of development. Based on analysis of surface movement rate, surface subsidence rate increase rapidly when mining in double lever at the same time, and reach its peak until the exploitation model ended. When double lever mining translate into single, production decreased, surface subsidence rate suddenly start to reduce and maintain a relatively low value, and the largest subsidence center will slowly move along with the hangingwall ore body direction with increasing depth of mining, at the same time, the scope and extent of subsidence in footwall ore body will begin magnify, and a sub-settlement center will appear on ground surface, accompanied with the development and closure trend of ground fissure, the surrounding rockmass of shaft and roadway will be confronted to more frequent and severe deformation and failure, and which will have a negative impact on the overall stability of No.2 mine mining. On the premise of continuity of rockmass movement, gray system model can be used in ground rockmass movement prediction for good results. Under the condition of backfill mining step by step, the loose effect of compact status of the hard, broken rockmass led to lower energy release rate, although surrounding rockmass has high elastic energy, loose and damage occurred in the horizontal ore body, which made the mining process safety without any large geological hazards. During the period of mining the horizontal ore body to end, in view of its special “residual support role”, there will be no large scale rockmass movement hazards. Since ground surface movement mainly related to the intensity of mining speed and backfill effect, on the premise of constant mining speed, during the period of mining the horizontal ore body to end, the rate of ground surface rockmass movement and deformation won’t have sudden change.

Effects of entry conditions on cracked kerosene-fueled supersonic combustor performance

Supersonic combustion of thermally cracked kerosene was experimentally investigated in two model supersonic combustors with different entry cross-section areas. Effects of entry static pressure, entry Mach number, combustor entry geometry, and injection scheme on combustor performance were systematically investigated and discussed based on the measured static pressure distribution and specific thrust increment due to combustion. In addition, the methodology for characterizing flow rate and composition of cracked kerosene was detailed. Using a pulsed Schlieren system, the interaction of supercritical and cracked kerosene jet plumes with a Mach 2.5 crossflow was also visualized at different injection temperatures. The present experimental results suggest that the use of a higher combustor entry Mach number as well as a larger combustor duct height would suppress the boundary layer separation near the combustor entrance and avoid the problem of inlet un- start.

Effects of subretinal implant materials on the viability, apoptosis and barrier function of cultured RPE cells

Background: Subretinal microphotodiode array (MPDA) is a type of visual prosthesis used for the implantation in the subretinal space of patients with progressive photoreceptor cell loss. The present study aimed to evaluate the effect of materials for MPDA on the viability, apoptosis and barrier function of cultured pig retinal pigment epithelium (RPE) cells.Methods: Primary culture of pig RPE cells was performed and 24 pig eyes were used to start RPE culture. The third passage of the cultures was plated on different materials for MPDA and MPDAs. The tetrazolium dye-reduction assay (MTT) was used to determine RPE cell viability. Flow cytometry was measured to indicate the apoptosis rates of RPE cells on different materials. RPE cells were also cultured on microporous filters, and the transepithelial resistance and permeability of the experimental molecule were measured to determine the barrier function.Results: The data from all the methods indicated no significant difference between the materials groups and the control group, and the materials tested showed good biocompatibility.Conclusions: The materials for MPDA used in the present study had no direct toxicity to the RPE cells and did not release harmful soluble factors that affected the barrier function of RPE in vitro.

Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots

On the basis of the density functional theory (DFT) within local density approximations (LDA) approach, we calculate the band gaps for different size SnO2 quantum wire (QWs) and quantum dots (QDs). A model is proposed to passivate the surface atoms of SnO2 QWs and QDs. We find that the band gap increases between QWs and bulk evolve as Delta E-g(wire) = 1.74/d(1.20) as the effective diameter d decreases, while being Delta E-g(dot) = 2.84/d(1.26) for the QDs. Though the similar to d(1.2) scale is significantly different from similar to d(2) of the effective mass result, the ratio of band gap increases between SnO2 QWs and QDs is 0.609, very close to the effective mass prediction. We also confirm, although the LDS calculations underestimate the band gap, that they give the trend of band gap shift as much as that obtained by the hybrid functional (PBE0) with a rational mixing of 25% Fock exchange and 75% of the conventional Perdew-Burke-Ernzerhof (PBE) exchange functional for the SnO2 QWs and QDs. The relative deviation of the LDA calculated band gap difference Lambda E-g compared with the corresponding PBE0 results is only within 5%. Additionally, it is found the states of valence band maximum (VBM) and conduction band minimum (CBM) of SnO2 QWs or QDs have a mostly p- and s-like envelope function symmetry, respectively, from both LDA and PBE0 calculations.

Interference in transport through double barriers in interacting quantum wires

We investigate interference effects of the backscattering current through a double-barrier structure in an interacting quantum wire attached to noninteracting leads. Depending on the interaction strength and the location of the barriers, the backscattering current exhibits different oscillation and scaling characteristics with the applied voltage in the strong and weak interaction cases. However, in both cases, the oscillation behaviors of the backscattering current are mainly determined by the quantum mechanical interference due to the existence of the double barriers.

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures

We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2DEG) and quantum spin Hall (QSH) bar in a HgTe/CdTe quantum well with inverted band structures. For the 2DEG, the transmission shows the Fabry-Perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. For the QSH bar, the transmission gap is reduced to the edge gap caused by the finite size effect. Instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. Such a Fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.

Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)

We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.

Photovoltaic effects in InGaN structures with p-n junctions

InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. Using double-crystal X-ray diffraction measurements, it was found that the room temperature band gaps of p-InGaN and n-InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 x 10(-2) mA cm(-2) short-circuit current, 0.43 V open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a Schottky barrier and many defects of the p-InGaN film. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m

The authors report the effects of rapid thermal annealing (RTA) on the emission properties of highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mu m grown on GaAs substrate by metal organic chemical vapor deposition. Postgrowth RTA experiments were performed under N-2 flow at temperatures ranging from 600 to 900 degrees C for 30 s using GaAs proximity capping. Surprisingly, in spite of the capping, large blueshifts in the emission peak (up to about 380 meV at 850 degrees C) were observed (even at low annealing temperatures) along with enhanced integrated photoluminescence (PL) intensities. Moreover, pronounced peak broadenings occurred at low annealing temperatures (< 700 degrees C), indicating that RTA does not always cause peak narrowing, as is typically observed with traditional QDs with large inhomogeneous PL linewidths. The mechanism behind the large peak blueshift was studied and found to be attributed to the as-grown QDs with large size, which cause a larger dot-barrier interface and greater strain in and near the QD regions, thereby greatly promoting Ga-In intermixing across the interface during RTA. The results reported here demonstrate that it is possible to significantly shift the emission peak of the QDs by RTA without any additional procedures, even at lower annealing temperatures. (c) 2007 American Institute of Physics.

Disentangling mechanical and mass effects on nanomechanical resonators

Micro and nanomechanical resonators are powerful and label-free sensors of analytes in various environments. Their response, however, is a convolution of mass, rigidity, and nanoscale heterogeneity of adsorbates. Here we demonstrate a procedure to disentangle this complex sensor response, to simultaneously measure both mass and elastic properties of nanometer thick samples. This turns an apparent disadvantage of these resonators into a striking and unique asset, enabling them to measure more than mass alone.