Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

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This work was supported by the Outstanding Young Researchers Award Foundation of Shandong Province with Grant No. 2006BS01240, Natural Science Foundation of Shandong Province (No. 2009VRA06063) and the foundation of the Nano-Bio-Photonics laboratory in Korea Advanced Institute of Science and Technology, Korea. It was also supported by the National Basic Research Program (2007CB936700), the National Natural Science Foundation of China (Grant number: 10704065), and the State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences.

国际

This work was supported by the Outstanding Young Researchers Award Foundation of Shandong Province with Grant No. 2006BS01240, Natural Science Foundation of Shandong Province (No. 2009VRA06063) and the foundation of the Nano-Bio-Photonics laboratory in Korea Advanced Institute of Science and Technology, Korea. It was also supported by the National Basic Research Program (2007CB936700), the National Natural Science Foundation of China (Grant number: 10704065), and the State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences.