Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition


Autoria(s): Zhu BL (Zhu B. L.); Zhao XZ (Zhao X. Z.); Su FH (Su F. H.); Li GH (Li G. H.); Wu XG (Wu X. G.); Wu J (Wu J.); Wu R (Wu R.)
Data(s)

2010

Resumo

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

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The authors highly thank Q. Fu for his help in observing the surface morphology of the films by SEM. The authors wish to acknowledge the financial support provided by China Postdoctoral Science Foundation.

国内

The authors highly thank Q. Fu for his help in observing the surface morphology of the films by SEM. The authors wish to acknowledge the financial support provided by China Postdoctoral Science Foundation.

Identificador

http://ir.semi.ac.cn/handle/172111/11358

http://www.irgrid.ac.cn/handle/1471x/60771

Idioma(s)

英语

Fonte

Zhu BL (Zhu B. L.), Zhao XZ (Zhao X. Z.), Su FH (Su F. H.), Li GH (Li G. H.), Wu XG (Wu X. G.), Wu J (Wu J.), Wu R (Wu R.).Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition.VACUUM,2010,84(11):1280-1286

Palavras-Chave #半导体物理 #ZnO #Pulsed laser deposition (PLD) #Annealing treatment #Photoluminescence (PL) #OXIDE THIN-FILMS #SUBSTRATE-TEMPERATURE #OXYGEN-PRESSURE #ELECTRICAL-PROPERTIES #PLD TECHNIQUE #AL FILMS #EMISSION
Tipo

期刊论文