Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures

We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2DEG) and quantum spin Hall (QSH) bar in a HgTe/CdTe quantum well with inverted band structures. For the 2DEG, the transmission shows the Fabry-Perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. For the QSH bar, the transmission gap is reduced to the edge gap caused by the finite size effect. Instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. Such a Fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.

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Made available in DSpace on 2010-07-18T13:55:43Z (GMT). No. of bitstreams: 1 Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures.pdf: 420782 bytes, checksum: af695f629aeaa4cced87df05026f4515 (MD5) Previous issue date: 2010

This work was supported by the NSFC (Grant Nos. 60525405, 10874175, and 10704013) and RFDP (Grant No. 200801411042), and the bilateral project between Sweden and China.

国内

This work was supported by the NSFC (Grant Nos. 60525405, 10874175, and 10704013) and RFDP (Grant No. 200801411042), and the bilateral project between Sweden and China.