Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
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2010
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| Resumo |
The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24T06:54:37Z No. of bitstreams: 1 Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors .pdf: 345007 bytes, checksum: eb2ab6c5aeeea8869ccb5bf2c90d7a43 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24T07:17:11Z (GMT) No. of bitstreams: 1 Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors .pdf: 345007 bytes, checksum: eb2ab6c5aeeea8869ccb5bf2c90d7a43 (MD5) Made available in DSpace on 2010-05-24T07:17:11Z (GMT). No. of bitstreams: 1 Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors .pdf: 345007 bytes, checksum: eb2ab6c5aeeea8869ccb5bf2c90d7a43 (MD5) Previous issue date: 2010 National Science Fund for Distinguished Young Scholars 60925017 National Natural Science Foundation of China 60836003 60776047 National Basic Research Program of China 2007CB936700 National High Technology Research and Development Program of China 2007AA03Z401 其它 National Science Fund for Distinguished Young Scholars 60925017 National Natural Science Foundation of China 60836003 60776047 National Basic Research Program of China 2007CB936700 National High Technology Research and Development Program of China 2007AA03Z401 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhao DG (Zhao De-Gang), Zhang S (Zhang Shuang), Liu WB (Liu Wen-Bao), Hao XP (Hao Xiao-Peng), Jiang DS (Jiang De-Sheng), Zhu JJ (Zhu Jian-Jun), Liu ZS (Liu Zong-Shun), Wang H (Wang Hui), Zhang SM (Zhang Shu-Ming), Yang H (Yang Hui), Wei L (Wei Long).Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors .CHINESE PHYSICS B,2010,19(5):Art. No. 057802 |
| Palavras-Chave | #光电子学 #Ga vacancies #MOCVD #GaN #Schottky barrier photodetector #REVERSE-BIAS LEAKAGE #MOLECULAR-BEAM EPITAXY #P-N-JUNCTIONS #POSITRON-ANNIHILATION #DIODES #FILMS |
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期刊论文 |
