355 resultados para Silicon photonics
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.
Resumo:
Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.
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A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 mu m x 0.34 mu m, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 mu m, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 +/- 0.4 dB coupling loss between the taper fibers and the polished sides of the device. (c) 2008 Elsevier B.V. All rights reserved.
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A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efficient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 60nm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.
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A high-performance microring resonator in a silicon-on-insulator rib waveguide is realized by using the electron beam lithography followed by inductively coupled plasma etching. The design and the experimental realization of this device are presented in detail. In addition to improving relevant processes to minimize propagation loss, the coupling efficiency between the ring and the bus is carefully chosen to approach a critical coupling for high performance operating. We have measured a quality factor of 21,200 and an extinction ratio of 12.5dB at a resonant wavelength of 1549.32nm. Meanwhile, a low propagation loss of 0.89dB/mm in a curved waveguide with a bending radius of 40 mu m is demonstrated as well.
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A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.
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An ultra-compact silicon-on-insulator based photonic crystal corner mirror is designed and optimized. A sample is then successfully fabricated with extra losses 1.1 +/- 0.4dB for transverse-electronic (M) polarization for wavelength range of 1510-1630nm.
Fabrication and characterization of two-dimensional photonic crystal on silicon by efficient methods
Resumo:
Two-dimensional photonic crystals working in near infrared region are fabricated into silicon-on-insulator wafer by 248-nm deep UV lithography. We present an efficient way to measure the photonic crystal waveguide's light transmission spectra at given polarization states.
Resumo:
zhangdi于2010-03-29批量导入
Resumo:
A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS technology. The device can give more than 1 muW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V The external electrical-optical conversion efficiency is more than 10(-6). The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.
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Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5mum SiGe photodetector with quantum structures, 1GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in the paper.
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Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee(PL) from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.
Resumo:
Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.
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The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.
Resumo:
MnSb films were deposited on porous silicon substrates by physical vapor deposition (PVD) technique. Modulation effects due to the substrate on microstructure and magnetic properties of the MnSb film's were studied by scanning electron microscope (SEM), X-ray diffraction (XRD) and measurements of hysteresis loops. SEM images of the MnSb films indicate that net-like structures were obtained because of the special morphology of the substrates. The net-like MnSb films exhibit some novel magnetic properties different from the unpatterned referenced samples. For example, in the case of net-like morphology, the coercive field is as low as 60 Oe.