Recent progresses of silicon-based optoelectronic devices for application in fiber communication
| Data(s) |
2004
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|---|---|
| Resumo |
Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5mum SiGe photodetector with quantum structures, 1GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in the paper. Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5mum SiGe photodetector with quantum structures, 1GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in the paper. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:30Z (GMT). No. of bitstreams: 1 2415.pdf: 228055 bytes, checksum: eaf3681c82ee74028a4b29c8fb28b652 (MD5) Previous issue date: 2004 IEEE. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Yu, JZ .Recent progresses of silicon-based optoelectronic devices for application in fiber communication .见：IEEE .2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,139-141 |
| Palavras-Chave | #光电子学 #LOW-POWER-CONSUMPTION #MODULATOR #PHOTODETECTOR #FABRICATION #DIODE |
| Tipo |
会议论文 |
