Fabrication method of silicon nanostructures by anisotropic etching
| Data(s) |
2008
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| Resumo |
A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique. A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique. zhangdi于2010-03-09批量导入 Made available in DSpace on 2010-03-09T07:08:19Z (GMT). No. of bitstreams: 1 310.pdf: 1340195 bytes, checksum: 6daacbb898a7d0d8b5728065b44848e5 (MD5) Previous issue date: 2008 IEEE.; Informat Soc Technol.; Helios. [Han, Weihua; Yang, Xiang; Wang, Ying; Yang, Fuhua; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China IEEE.; Informat Soc Technol.; Helios. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Han, WH;Yang, X;Wang, Y;Yang, FH;Yu, JZ.Fabrication method of silicon nanostructures by anisotropic etching .见：IEEE .2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,: 146-148 |
| Palavras-Chave | #光电子学 |
| Tipo |
会议论文 |
