360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.

Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.

于2010-11-23批量导入

zhangdi于2010-11-23 13:02:24导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:02:24Z (GMT). No. of bitstreams: 1 4143.pdf: 337848 bytes, checksum: f70934e0bb9c557af6156aea4467ca62 (MD5) Previous issue date: 2006

National Natural Science Foundation of China

College of Information Science and Engineering, Huaqiao University;Institute of Semiconductors, CASs

National Natural Science Foundation of China