Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Device
| Data(s) |
2004
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| Resumo |
Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device. Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device. 于2010-11-23批量导入 zhangdi于2010-11-23 13:05:36导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:05:36Z (GMT). No. of bitstreams: 1 4631.pdf: 254535 bytes, checksum: 55e9428a88b7ac11a26510bb9f13f126 (MD5) Previous issue date: 2004 President Foundation of Chinese Academy of Sciences Institute of Semiconductors,Chinese Academy of Sciences;Institute of Physics,Chinese Academy of Sciences President Foundation of Chinese Academy of Sciences |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Li Jianming;Chong Ming;Xu Jiadong;Hu Chuanxian;Duan Xiaofeng;Gao Min;Wang Fenglian.Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Device,Semiconductor Photonics and Technology,2004,10(2):101-103 |
| Palavras-Chave | #光电子学 |
| Tipo |
期刊论文 |
