Numerical Analysis of Theoretical Model of the Rf MEMs Switches

An improved electromechanical model of the RF MEMS (radio frequency microelectromechanical systems) switches is introduced, in which the effects of intrinsic residual stress from fabrication processes, axial stress due to stretching of beam, and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model. A semi-analytical method is developed to calculate the behavior of the RF MEMS switches. Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared, and the corresponding analysis with the dimensionless numbers is conducted too. The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.

Failure modes of doubly supported capacitive RF MEMS switches

For the design of radio frequency micro-electro-mechanical systems (RF MEMS) switches, the reliability issue becomes increasingly important. This paper represents some failure phenomena of doubly supported capacitive RF MEMS switches that include observable destruction failure and directly measurable parameter degradation obtained from the actuating-voltage testing and scanning electron microscope (SEM) observation. The relevant failure modes as well as their failure mechanisms are identified.

Electromechanical Model of RF MEMS Switches

With the recent rapid growth of Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches, there has developed an emergent requirement for more accurate theoretical models to predict their electromechanical behaviors. Many parameters exist in the analysis of the behavior of the switch, and it is inconvenient for further study. In this paper, an improved model is introduced, considering simultaneously axial stress, residual stress, and fringing-field effect of the fixed-fixed bridge structure. To avoid any unnecessary repetitive model tests and numerical simulation for RF MEMS switches, some dimensionless numbers are derived by making governing equation dimensionless. The electromechanical behavior of the fixed-fixed bridge structure of RF MEMS switches is totally determined by these dimensionless numbers.

Pull-In Instability Of Micro-Switch Actuators: Model Review

The existing three widely used pull-in theoretical models (i.e., one-dimensional lumped model, linear supposition model and planar model) are compared with the nonlinear beam mode in this paper by considering both cantilever and fixed-fixed type micro and nano-switches. It is found that the error of the pull-in parameters between one-dimensional lumped model and the nonlinear beam model is large because the denominator of the electrostatic force is minimal when the electrostatic force is computed at the maximum deflection along the beam. Since both the linear superposition model and the slender planar model consider the variation of electrostatic force with the beam's deflection, these two models not only are of the same type but also own little error of the pull-in parameters with the nonlinear beam model, the error brought by these two models attributes to that the boundary conditions are not completely satisfied when computing the numerical integration of the deflection.

Stiction and Anti-Stiction in Mems and Nems

Stiction in microelectromechanical systems (MEMS) has been a major failure mode ever since the advent of surface micromachining in the 80s of the last century due to large surface-area-to-volume ratio. Even now when solutions to this problem are emerging, such as self-assembled monolayer (SAM) and other measures, stiction remains one of the most catastrophic failure modes in MEMS. A review is presented in this paper on stiction and anti-stiction in MEMS and nanoelectromechanical systems (NEMS). First, some new experimental observations of stiction in radio frequency (RF) MEMS switch and micromachined accelerometers are presented. Second, some criteria for stiction of microstructures in MEMS and NEMS due to surface forces (such as capillary, electrostatic, van der Waals, Casimir forces, etc.) are reviewed. The influence of surface roughness and environmental conditions (relative humidity and temperature) on stiction are also discussed. As hydrophobic films, the self-assembled monolayers (SAMs) turn out able to prevent release-related stiction effectively. The anti-stiction of SAMs in MEMS is reviewed in the last part.

Casimir Effect on the Pull-in Parameters of Nanometer Switches

Casimir effect on the critical pull-in gap and pull-in voltage of nanoelectromechanical switches is studied. An approximate analytical expression of the critical pull-in gap with Casimir force is presented by the perturbation theory. The corresponding pull-in parameters are computed numerically, from which one can notice the nonlinear effect of Casimir force on the pull-in parameters. The detachment length has been presented, which increases with increasing thickness of the beam.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.

Nano-Hardness Tester and its Application in MEMS

微机电系统(MEMS)技术的迅速崛起,推动了对其所用材料和结构的力学性能研究。简要介绍纳米硬度技术的发展展、理论模型和MTS公司的Nano Indenter XP系统的配置、测量原理及功能。并根据我们的一些研究结果,说明它在微机电系统中的应用。

Mechanics of Adhesion in MEMS-a Review

A review is presented of the mechanics of microscale adhesion in microelectromechanical systems (MEMS). Some governing dimensionless numbers such as Tabor number, adhesion parameter and peel number for microscale elastic adhesion contact are discussed in detail. The peel number is modified for the elastic contact between a rough surface in contact with a smooth plane. Roughness ratio is introduced to characterize the relative importance of surface roughness for microscale adhesion contact, and three kinds of asperity height distributions are discussed: Gaussian, fractal, and exponential distributions. Both Gaussian and exponential distributions are found to be special cases of fractal distribution. Casimir force induced adhesion in MEMS, and adhesion of carbon nanotubes to a substrate are also discussed. Finally, microscale plastic adhesion contact theory is briefly reviewed, and it is found that the dimensionless number, plasticity index of various forms, can be expressed by the roughness ratio.

Deflections and Curvatures of a Film–Substrate Structure with the Presence of Gradient Stress in MEMS Applications

The close form solutions of deflections and curvatures for a film–substrate composite structure with the presence of gradient stress are derived. With the definition of more precise kinematic assumption, the effect of axial loading due to residual gradient stress is incorporated in the governing equation. The curvature of film–substrate with the presence of gradient stress is shown to be nonuniform when the axial loading is nonzero. When the axial loading is zero, the curvature expressions of some structures derived in this paper recover the previous ones which assume the uniform curvature. Because residual gradient stress results in both moment and axial loading inside the film–substrate composite structure, measuring both the deflection and curvature is proposed as a safe way to uniquely determine the residual stress state inside a film–substrate composite structure with the presence of gradient stress.

Analysis of residual stress gradient in MEMS multi-layer structure

Residual stress and its gradient through the thickness are among the most important properties of as-deposited films. Recently, a new mechanism based on a revised Thomas-Fermi-Dirac (TFD) model was proposed for the origin of intrinsic stress in solid film

材料磨损与MEMS中的磨损现象

　磨损是材料和机械失效的主要原因之一。本文介绍了近年来材料磨损性能研究的进展,磨损的几种破坏机 制以及相应的磨损理论模型,并介绍了MEMS 中磨损研究的现状。

Measurement of Mechanical Properties of MEMS Materials

微电子机械系统（MEMS）技术的迅速崛起,推动了所用材料微尺度力学性能测试技术的发展.首先按作用方式将实验分成压痕/划痕、弯曲、拉伸、扭转四大类,系统介绍检测MEMS材料微尺度力学性能的微型试样、测试方法及其实验结果.测试材料主要有硅、氧化硅、氮化硅和一些金属.实验结果主要包括基本的力学性能参数如弹性模量、残余应力、屈服强度、断裂强度和疲劳强度等.最后,简要分析了未来的发展需求.