电化学C-V法研究磁性GaMnSb/GaSb单晶的载流子浓度纵向分布

采用电化学C-V方法和Tiron电解液研究了GaMnSb/GaSb单晶载流子浓度的纵向分布，所得结果与Hall测量结果和X射线衍射分析结果一致。研究结果表明GaMnSb单晶中的Mn原子替代了GaSb中部分Ga原子的位置，并在GaSb中形成了浅受主能级。

赝配GaAs/In_(0.2)Ga_(0.8)As量子阱导带不连续量的C-V和电容瞬态测量

半导体材料开放实验室基金,国家自然科学基金

瞬态C-V方法对Al_xGa_(1-x)As中DX中心的研究

于2010-11-23批量导入

Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

V^3＋：YAG晶体的生长、色心与光谱性能研究

采用石墨电阻加热的温梯法生长了V：YAG晶体，晶体的不同部位呈现两种不同的颜色：浅绿色和黄褐色．通过对比分析不同颜色V：YAG晶体的室温吸收光谱，推断出石墨发热体高温下扩散出来的C���以起到还原作用，提高晶体中V^3＋tetra离子的浓度，同时诱导了F心的形成．在1300℃下，对不同颜色的V：YAG晶体进行真空退火处理，发现处于八面体格位中的V^3＋离子在热激发作用下与近邻的四面体格位Al^3＋离子存在置换反应，由此产生一定浓度的四面体格位V^3＋离子．同时，F心在退火过程中被完全消除，释放出来的自由电子被

Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction

Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/ (p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode. (C) 2003 Elsevier Science Ltd. All rights reserved.

(p)nc-Si:H/(n)c-Si异质结变容二极管

采用等离子体增强化学气相沉积技术和电子束蒸发技术制备了一种新型的线性缓变异质结变容二极管--Au/Cr合金(电极)/multi-layer(p)nc-Si:H/(n)c-Si/(电极)Au/Ge合金结构.I-V,C-V,G-f以及DLTS的测试结果表明:其电容变化系数远大于单晶硅线性缓变异质结的电容变化系数,正向导电机制符合隧穿辅助辐射-复合模型,这是nc-Si:H层中nc-Si晶粒的量子效应所致;反向电流主要由异质结中空间电荷区的产生电流决定,且反向漏电流小,反向击穿电压高,表现出较好的整流特性.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

室温铁磁性半导体Mn_xGa_(1-x)Sb

采用离子注入、离子沉积及后期退火方法制备了稀磁半导体单晶Mn_xGa_(1-x)Sb，在室温下（300 K）获得了单晶的磁滞回线。用X射线衍射方法分析了铁磁性半导体单晶Mn_xGa_(1-x)Sb的结构，用电化学C-V法分析了单晶的载流子浓度分布。由X射线衍射得知，Mn_xGa_(1-x)Sb中Mn含量逐渐由近表面处的x = 0.09下降到晶片内部的x = 0。电化学C-V测得单晶的空穴浓度高达1 * 10~(21)cm~(-3)，表明Mn_xGa_(1-x)Sb单晶中大部分Mn原子占据Ga位，起受主作用。

低能离子束方法制备重掺杂Fe的Si∶Fe固溶体

利用质量分离的低能离子束方法 ,以离子能量为 1 0 0 0 e V,剂量为 3× 1 0 1 7cm- 2 ,室温下往 p型 Si(1 1 1 )单晶衬底注入 Fe离子 ,注入的样品在 4 0 0℃真空下进行热处理 .俄歇电子能谱法 (AES)对原位注入样品深度分析表明 Fe离子浅注入到 p型 Si单晶衬底 ,注入深度约为 4 2 nm.X射线衍射法 (XRD)对热处理样品结构分析发现只有 Si衬底的衍射峰 ,没有其他新相 .X射线光电子能谱法 (XPS)对热处理样品表面分析发现 Fe2 p束缚能对应于单质 Fe的峰 ,没有形成 Fe的硅化物 .这些结果表明重掺杂 Fe的 Si∶ Fe固溶体被制备 .电化学 C- V法测量了热处理后样品载流子浓度随深度的分布 ,发现 Fe重掺杂 Si致使 Si的导电类型从 p型转为 n型 ,Si∶ Fe固溶体和 Si衬底形成 pn结 ,具有整流特性

“Deborah Numbers”, Coupling Multiple Space and Time Scales and Governing Damage Evolution to Failure

Two different spatial levels are involved concerning damage accumulation to eventual failure. nucleation and growth rates of microdamage nN* and V*. It is found that the trans-scale length ratio c*/L does not directly affect the process. Instead, two independent dimensionless numbers: the trans-scale one * * ( V*)including the * **5 * N c V including mesoscopic parameters only, play the key role in the process of damage accumulation to failure. The above implies that there are three time scales involved in the process: the macroscopic imposed time scale tim = /a and two meso-scopic time scales, nucleation and growth of damage, (* *4) N N t =1 n c and tV=c*/V*. Clearly, the dimensionless number De*=tV/tim refers to the ratio of microdamage growth time scale over the macroscopically imposed time scale. So, analogous to the definition of Deborah number as the ratio of relaxation time over external one in rheology. Let De be the imposed Deborah number while De represents the competition and coupling between the microdamage growth and the macroscopically imposed wave loading. In stress-wave induced tensile failure (spallation) De* < 1, this means that microdamage has enough time to grow during the macroscopic wave loading. Thus, the microdamage growth appears to be the predominate mechanism governing the failure. Moreover, the dimensionless number D* = tV/tN characterizes the ratio of two intrinsic mesoscopic time scales: growth over nucleation. Similarly let D be the “intrinsic Deborah number”. Both time scales are relevant to intrinsic relaxation rather than imposed one. Furthermore, the intrinsic Deborah number D* implies a certain characteristic damage. In particular, it is derived that D* is a proper indicator of macroscopic critical damage to damage localization, like D* ∼ (10–3~10–2) in spallation. More importantly, we found that this small intrinsic Deborah number D* indicates the energy partition of microdamage dissipation over bulk plastic work. This explains why spallation can not be formulated by macroscopic energy criterion and must be treated by multi-scale analysis.

水稻Phi类谷胱甘肽转移酶基因家族的功能分化研究

在植物中大多数功能基因是以基因家族的形式存在的，而基因重复则是基因家族的一种重要的进化方式。很多基因往往是由重复事件产生形成不同的拷贝，进而分化形成基因家族。谷胱甘肽转移酶（GSTs）是一类古老、庞大、行使解毒、抗逆、信号转导等多种功能的一个基因家族。本研究以栽培水稻（Oryza sativa ssp. japonica c.v. Nipponbare）为研究材料，以栽培水稻的Phi类GST的5个基因（OsGSTF3、OsGSTF6、OsGSTF14、OsGSTF15、OsGSTF16）为研究对象，分析了它们的系统发生和起源历史、不同组织的差异性表达、编码蛋白质的功能差异等问题，探讨了基因重复后5个基因的功能变化，主要结果如下： 1. OsGSTF3、OsGSTF14、OsGSTF15、OsGSTF16由串联重复产生，而OsGSTF6则由DNA转座产生;它们起源时间早在稻属（Oryza）分化之前。 2. 对水稻不同部位组织的RT-PCR结果表明这5个基因在水稻中的特异性表达组织部位有较大差异：OsGSTF3基因在叶、叶鞘、茎、根4个部位均有大量表达;OsGSTF6基因仅在叶中有表达;OsGSTF14基因在叶鞘、茎2个部位中有表达;OsGSTF15基因在茎、根2个部位中有表达;OsGSTF16则在叶、茎、根3个部位中有表达。 3. 将这5个基因连接原核表达载体PET30a并转化大肠杆菌BL21（DE3），获得了高表达菌株。将表达菌株进行大量表达，表达形式分析显示OsGSTF3蛋白是可溶性表达，而其余4个蛋白以包涵体的形式表达。通过亲和层析获得了纯化的OsGSTF3融合蛋白，OsGSTF3融合蛋白对底物CDNB和NBD-Cl具有高活性，酶动力学分析显示OsGSTF3融合蛋白对GSH与NBD-Cl有较高的亲和力，热力学分析显示该蛋白在40℃以下是热稳定的。通过对包涵体进行洗涤、亲和层析获得了纯化的OsGSTF6、OsGSTF14、OsGSTF15、OsGSTF16的融合蛋白，OsGSTF14融合蛋白对NBD-Cl有微弱活性，OsGSTF15融合蛋白对NBC���较高的活性，而没有检测到OsGSTF6与OsGSTF16融合蛋白的活性。

Bombinakinin M gene associated peptide, a novel bioactive peptide from skin secretions of the toad Bombina maxima

A novel 28-amino acid peptide, termed bombinakinin-GAP, was purified and characterized from skin secretions of the toad Bombina maxima. Its primary structure was established as DMYEIKQYKTAHGRPPICAPGEQCPIWV-NH2, in which two cysteines form a disulfide bond. A FASTA search of SWISS-PROT databank detected a 32% sequence identity between the sequences of the peptide and a segment of rat cocaine- and amphetamine-regulated transcript (CART). Intracerebroventricular (i.c.v.) administration of the peptide induced a significant decrease in food intake in rats, suggesting that it played a role in the control of feeding by brain. Analysis of its cDNA structure revealed that this peptide is coexpressed with bombinakinin M, a bradykinin-related peptide from the same toad. Bombinakinin-GAP appears to be the first example of a novel class of bioactive peptides from amphibian skin, which may be implicated in feeding behavior. (C) 2003 Elsevier Science Inc. All rights reserved.

Effect of the oxygen concentration on the properties of Gd2O3 thin films

Gd2O3 thin films were deposited on Si (100) substrates at 650degreesC by a magnetron sputtering system under different Ar/O-2 ratios of 6:1, 4:1 and 2:1. The effect of the oxygen concentration on the properties of oxide thin films was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and capacitance-voltage (C-V)measurement. X-ray diffraction shows that the structure of oxide films changed from the monoclinic Gd2O3 phase to cubic Gd2O3 phase when the oxygen concentration increased. According to C-V measurement, the dielectric constant value of the samples deposited at different Ar/O-2 ratios is about 12. (C) 2004 Elsevier B.V. All rights reserved.