Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler


Autoria(s): Zhang XL; 张富强; Song SL; 陈诺夫; Wang ZG; Lin LY
Data(s)

2002

Resumo

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Identificador

http://dspace.imech.ac.cn/handle/311007/33673

http://www.irgrid.ac.cn/handle/1471x/2685

Idioma(s)

英语

Fonte

Chinese Science Bulletin.2002,47(21):1780-1782

Palavras-Chave #Electrochemistry C-V #Magnetic Semiconductor #Gamnsb #Iii-V Semiconductors #Magnetotransport Properties #Transport-Properties #(In #Magnetoresistance #Heterostructures #(Ga #Gaas #Mn)As/(Ga #Mn)As #Al)Sb
Tipo

期刊论文