Effect of the oxygen concentration on the properties of Gd2O3 thin films
Data(s) |
2004
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Resumo |
Gd2O3 thin films were deposited on Si (100) substrates at 650degreesC by a magnetron sputtering system under different Ar/O-2 ratios of 6:1, 4:1 and 2:1. The effect of the oxygen concentration on the properties of oxide thin films was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and capacitance-voltage (C-V)measurement. X-ray diffraction shows that the structure of oxide films changed from the monoclinic Gd2O3 phase to cubic Gd2O3 phase when the oxygen concentration increased. According to C-V measurement, the dielectric constant value of the samples deposited at different Ar/O-2 ratios is about 12. (C) 2004 Elsevier B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li, YL; Chen, NF; Zhou, JP; Song, SL; Liu, LF; Yin, ZG; Cai, CL .Effect of the oxygen concentration on the properties of Gd2O3 thin films ,JOURNAL OF CRYSTAL GROWTH,MAY 1 2004,265 (3-4):548-552 |
Palavras-Chave | #半导体材料 #dielectric constant |
Tipo |
期刊论文 |