METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN

Single-crystal GaN films have been deposited on (01 (1) over bar 2) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.

Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE

Wet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90～300 ℃. It is found that different solution produces different etch figure on the surfaces of a sample. KOH-based solutions produce rectangular pits rather than square pits. The etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. In addition, it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c-GaN epilayers.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Growth and characterization of GaN on LiGaO2 and LiAlO2

The nearly lattice-matched LiGaO2 and LiAlO2 substrates have been used for the growth of GaN by LP-MOVPE. GaN epilayers have been grown on the two substrates at very low input partial pressure of hydrogen and relatively low growth temperature. The difference in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiAlO2 and LiGaO2 substrate with two polar domains are investigated. LiAlO2 and LiGaO2 single crystal with a single domain structure and an adequate surface plane are promising substrates for the growth of high quality of hexagonal GaN thin films.

The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

Growth and characterization of GaN on LiGaO2

The nearly lattice-matched (0 0 1)LiGaO2 substrates have been used for the growth of GaN by LP-MOVPE, GaN epilayers have been grown on both domains at very low input partial pressure of hydrogen and relatively low growth temperature. The differences in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiGaO2 substrate with two polar domains are investigated. LiGaO2 single crystal with a single domain structure and an adequate surface plane is a promising substrate for the growth of high quality of hexagonal GaN thin films. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Fabrication of Novel Superhydrophobic Surfaces and Water Droplet Bouncing Behavior - Part 1: Stable ZnO-PDMS Superhydrophobic Surface with Low Hysteresis Constructed Using ZnO Nanoparticles

A superhydrophobic surface has many advantages in micro/nanomechanical applications, such as low adhesion, low friction and high restitution coefficient, etc. In this paper, we introduce a novel and simple route to fabricate superhydrophobic surfaces using ZnO nanocrystals. First, tetrapod-like ZnO nanocrystals were prepared via a one-step, direct chemical vapor deposition (CVD) approach. The nanostructured ZnO material was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD) and the surface functionalized by aminopropyltriethoxysilane (APS) was found to be hydrophobic. Then the superhydrophobic surface was constructed by depositing uniformly ZnO hydrophobic nanoparticles (HNPs) on the Poly(dimethylsiloxane) (PDMS) film substrate. Water wettability study revealed a contact angle of 155.4 +/- 2 degrees for the superhydrophobic surface while about 110 degrees for pure smooth PDMS films. The hysteresis was quite low, only 3.1 +/- 0.3 degrees. Microscopic observations showed that the surface was covered by micro- and nano-scale ZnO particles. Compared to other approaches, this method is rather convenient and can be used to obtain a large area superhydrophobic surface. The high contact angle and low hysteresis could be attributed to the micro/nano structures of ZnO material; besides, the superhydrophobic property of the as-constructed ZnO-PDMS surface could be maintained for at least 6 months. (C) Koninklijke Brill NV, Leiden, 2010

Facile fabrication of gold nanoparticle arrays for efficient surface-enhanced Raman scattering

An effective and facile method for the fabrication of a surface-enhanced Raman scattering (SERS)-active film with closely packed gold nanoparticle (AuNP) arrays is proposed by self-assembly of different sizes ( 16, 25, 40 and 70 nm) of AuNPs at a toluene/water interface with ethanol as the inducer. The as-prepared AuNP arrays exhibit efficient Raman scattering enhancement, and the enhancement factors estimated using p-aminothiophenol as a probe molecule range from 10(5) to 10(7).

Template-free fabrication of hexagonal ZnO microprism with an interior space

Well-faceted hexagonal ZnO microprisms with regular interior space have been successfully prepared by a template-free hydrothermal synthetic route. The morphologies of the products depend on the experimental conditions such as the solvent, the concentration of ammonia aqueous solution, and the reaction temperature. Through manipulation of the aging time, the as-prepared ZnO can be controlled as a monodispersed hexagonal twinning solid or as hollow microprisms. Moreover, the evolution process of the hollow ZnO nanoarchitecture after reaction for 2, 6, 12, and 24 h has been investigated by field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). A possible growth mechanism has also been proposed and discussed. Furthermore, the photoluminescence (PL) measurement exhibits the unique emitting characteristic of hollow ZnO nanostructures.

Fabrication of self-assembled palladium nanosheets using layered organic/inorganic hybrid as the template

In this paper, a simple route to the fabrication of palladium nanosheets is described. The interaction of palladium chloride (PdCl2) and n-octylamine salt resulted in the formation of a quasi-perovskite-type composite with a layered structure on a molecular scale. This composite can be employed as a template for preparing ultrathin Pd nanosheets when a {PdCl4}(2-) network is reduced in situ by hydrogen in toluene. The x-ray diffraction results indicate that the resulting Pd nanosheets are highly ordered, and they are confined inside the organic matrix as evidenced by high resolution transmission electron microscopy. These Pd nanosheets can be reorganized into layered structures in non-polarized organic solvent when the ordered structure is destroyed. This method of preparing Pd nanosheets is expected to be applicable to other layered organic/inorganic perovskite systems for obtaining the corresponding metal nanosheets.

Carboxyl-cored dendrimer and toluene-assisted fabrication of uniform platinum nanodendrites at a water/oil interface and their potential application as a catalyst

Uniform platinum nanodendrites have been prepared at a water/oil interface by a facile catalyst-free method at room temperature. This is carried out by introducing NaBH4 into the platinum precursor solution in the presence of the second generation of carboxyl-cored dendrimer ([G-2]-CO2H dendrimer) and toluene to act as a protective agent and a linker, respectively. The average fractal dimension of 1.61 of the obtained platinum nanodendrites is calculated by analysing the transmission electron micrographs using the programs Fractal Dimension Version 1.1 and Fractal Dimension Calculator. Control experiments show that the fabrication of platinum nanodendrites can be operated with a wide parameter window, which undoubtedly raises the degree of control of the synthesis process. The potential application of such a nanostructure as a catalyst is investigated, and the results reveal that they show highly efficient catalytic properties for the typical redox reaction between hexacyanoferrate (III) and thiosulfate ions at 301 K.

Fabrication of arrays of silver nanoparticle aggregates by microcontact printing and block copolymer nanoreactors

A combination of microcontact printing and block copolymer nanoreactors succeeded in fabricating arrays of silver nanoparticle aggregates. A complex solution of polystyrene-block-poly(4-vinylpyridine) micelles and silver salt was used as an ink to form thin films or droplets on polydimethylsiloxane stamp protrusions. After these complex aggregates were printed onto silicon substrates under controlled conditions, highly ordered arrays of disklike, dishlike, and dotlike complex aggregates were obtained. A Subsequent oxygen reactive ion etching treatment yielded arrays of silver nanoparticle aggregates.

Fabrication of a metalloporphyrin - Polyoxometalate hybrid film by a layer-by-layer method and its catalysis for hydrogen evolution and dioxygen reduction

Tetrakis (N-methylpyridyl) porphyrinato] cobalt (CoTMPyP) and 1:12 silicotungstic acid (SiW12) were alternately deposited on a 4-aminobenzoic acid (4-ABA)-modified glassy carbon electrode through a layer-by-layer method. The resulting organic-inorganic hybrid films were characterized by cyclic voltammetry (CV) and UV/vis absorption spectroscopy. We proved that the prepared multilayer films are uniform and stable. SiW12-containing multilayer films (SiW12 as the outermost layer) exhibit remarkable electrocatalytic activity for the hydrogen evolution reaction (HER). The kinetic constants for HER were comparatively investigated at different layers Of SiW12/CoTMPyP multilayer film-modified electrodes by hydrogen evolution voltammetry. In addition, rotating disk electrode (RDE) and rotating ring-disk electrode (RRDE) voltammetric methods confirm that SiW12/CoTMPyP (CoTMPyP as the outermost layer) multilayer films catalyze almost a two-electron reduction of O-2 to H2O2 in pH 1-6 buffer solutions. Furthermore, P2W18/CoTMPyP films were also assembled, and their catalytic activity for HER is very different from that Of SiW12/CoTMPyP multilayer films.