METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN
| Data(s) |
1995
|
|---|---|
| Resumo |
Single-crystal GaN films have been deposited on (01 (1) over bar 2) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
LU DC; WANG D; WANG XH; LIU XL; DONG JR; GAO WB; LI CJ; LI YY .METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY ,1995,29(0):58-60 |
| Palavras-Chave | #半导体材料 #GALLIUM NITRIDE #EPITAXY OF THIN FILMS #MOCVD #CHEMICAL VAPOR DEPOSITION #BUFFER LAYER #SUBSTRATE #SAPPHIRE #EPITAXY #MOVPE |
| Tipo |
期刊论文 |
